Detailansicht

Wissensnetz

Person

Detlev Grützmacher (1960-)

Physiker

Name	Detlev Grützmacher
Zeit	1960- (Lebensdaten)
Ort	Hamburg (Geburtsort) Deutschland
Geschlecht	männlich
Akademischer Grad bzw. Titel	Prof. Dr. rer. nat.
Beruf	Physiker (charakteristischer Beruf) Hochschullehrer
Variante	D. Grützmacher Detlev A. Grützmacher
Beziehung	Forschungszentrum Jülich RWTH Aachen. Physikalisches Institut 2 Experimentalphysik (Thema)
Weitere Angaben	Universitätsprofessor, Lehrstuhl für Experimentalphysik (Festkörperphysik) FZ Jülich GmbH, PGI-9 und II. Physikalisches Institut
Quelle	Vorlage
Datensatztyp	Person
GND-Nummer	1093883014
Datensatz-ID	1093883014
Beteiligt an alle anzeigen Phase‐Coherent Transport in GeSn Alloys on Si Enhancing Device Performance with High Electron Mobility GeSn Materials Publisher Correction: Observation of Josephson harmonics in tunnel junctions Observation of Josephson harmonics in tunnel junctions Atomic Diffusion-Induced Polarization and Superconductivity in Topological Insulator-Based Heterostructures Observation of Josephson harmonics in tunnel junctions Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111) Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions Vertical GeSn nanowire MOSFETs for CMOS beyond silicon Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si Lifting the Spin‐Momentum Locking in Ultra‐Thin Topological Insulator Films Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices Lifting the Spin‐Momentum Locking in Ultra‐Thin Topological Insulator Films Reappearance of first Shapiro step in narrow topological Josephson junctions Quantum Transport in Topological Surface States of Selectively Grown Bi 2 Te 3 Nanoribbons Phase-coherent loops in selectively-grown topological insulator nanoribbons Proximity‐Effect‐Induced Superconductivity in Nb/Sb$_{2}$Te$_{3}$‐Nanoribbon/Nb Junctions Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film Structural Property Study for GeSn Thin Films Thermally activated diffusion and lattice relaxation in (Si)GeSn materials Influence of Te-Doping on Catalyst-Free VS InAs Nanowires Capacitance–Voltage Measurements of (Bi 1– x Sb x) 2 Te 3 Field Effect Devices Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures In situ disentangling surface state transport channels of a topological insulator thin film by gating In situ disentangling surface state transport channels of a topological insulator thin film by gating Bi1Te1 is a dual topological insulator Growth and structural characterization of III-V semiconductor nanowires Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures Comparison of InAs nanowire conductivity: influence of growth method and structure MOVPE im System Ga-In-As-P : ein Beitrag zur Technologie und Charakterisierung von Quantentöpfen

Hinweis

Die Betaversion beinhaltet noch nicht alle Funktionen und Informationen des Katalogs des DNB-Portals. Falls Sie Informationen vermissen oder ein Medium bestellen wollen, besuchen Sie bitte die entsprechende Seite im Katalog des DNB-Portals über folgenden Link:

Katalog der Deutschen Nationalbibliothek

Detlev Grützmacher (1960-)

Phase‐Coherent Transport in GeSn Alloys on Si

Enhancing Device Performance with High Electron Mobility GeSn Materials

Publisher Correction: Observation of Josephson harmonics in tunnel junctions

Observation of Josephson harmonics in tunnel junctions

Atomic Diffusion-Induced Polarization and Superconductivity in Topological Insulator-Based Heterostructures

Observation of Josephson harmonics in tunnel junctions

Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics

Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111)

Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks

Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions

Vertical GeSn nanowire MOSFETs for CMOS beyond silicon

Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si

Lifting the Spin‐Momentum Locking in Ultra‐Thin Topological Insulator Films

Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices

Lifting the Spin‐Momentum Locking in Ultra‐Thin Topological Insulator Films

Reappearance of first Shapiro step in narrow topological Josephson junctions

Quantum Transport in Topological Surface States of Selectively Grown Bi 2 Te 3 Nanoribbons

Phase-coherent loops in selectively-grown topological insulator nanoribbons

Proximity‐Effect‐Induced Superconductivity in Nb/Sb$_{2}$Te$_{3}$‐Nanoribbon/Nb Junctions

Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film

Structural Property Study for GeSn Thin Films

Thermally activated diffusion and lattice relaxation in (Si)GeSn materials

Influence of Te-Doping on Catalyst-Free VS InAs Nanowires

Capacitance–Voltage Measurements of (Bi 1– x Sb x) 2 Te 3 Field Effect Devices

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

In situ disentangling surface state transport channels of a topological insulator thin film by gating

In situ disentangling surface state transport channels of a topological insulator thin film by gating

Bi1Te1 is a dual topological insulator

Growth and structural characterization of III-V semiconductor nanowires

Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures

Comparison of InAs nanowire conductivity: influence of growth method and structure

MOVPE im System Ga-In-As-P : ein Beitrag zur Technologie und Charakterisierung von Quantentöpfen