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Bernd Steinhauser

Physiker

Name	Bernd Steinhauser
Ort	Deutschland
Geschlecht	männlich
Akademischer Grad bzw. Titel	Dr. rer. nat. (Universität Konstanz, Fachbereich Physik) (2017)
Beruf	Physiker (charakteristischer Beruf)
Datensatztyp	Person
GND-Nummer	1139517325
Datensatz-ID	1139517325
Beteiligt an alle anzeigen Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production Epitaxially grown p‐type silicon wafers eeady for cell efficiencies exceeding 25% Quantifying surface recombination — improvements in determination and simulation of the surface recombination parameter J0s Silicon‐based passivating contacts: The TOPCon route Investigation of the Defect Distribution of Laser Contact Opening Applied to Poly‐Si/SiN x Stacks Investigation of the defect distribution of laser contact opening applied to Poly‐Si/SiNx stacks Reassessment of the intrinsic bulk recombination in crystalline silicon Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon Extraordinarily high minority charge carrier lifetime observed in crystalline silicon On the Influence of the SiN x Composition on the Firing Stability of Poly‐Si/SiN x Stacks Taking monocrystalline silicon to the ultimate lifetime limit Passivating dopant sources for high-efficiency n-type silicon solar cells

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Bernd Steinhauser

Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production

Epitaxially grown p‐type silicon wafers eeady for cell efficiencies exceeding 25%

Quantifying surface recombination — improvements in determination and simulation of the surface recombination parameter J0s

Silicon‐based passivating contacts: The TOPCon route

Investigation of the Defect Distribution of Laser Contact Opening Applied to Poly‐Si/SiN x Stacks

Investigation of the defect distribution of laser contact opening applied to Poly‐Si/SiNx stacks

Reassessment of the intrinsic bulk recombination in crystalline silicon

Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Extraordinarily high minority charge carrier lifetime observed in crystalline silicon

On the Influence of the SiN x Composition on the Firing Stability of Poly‐Si/SiN x Stacks

Taking monocrystalline silicon to the ultimate lifetime limit

Passivating dopant sources for high-efficiency n-type silicon solar cells