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Frank Schwierz

Name	Frank Schwierz
Ort	Ilmenau (Wirkungsort) Deutschland
Akademischer Grad bzw. Titel	Dr.-Ing. habil.
Beziehung	Technische Universität Ilmenau. Institut für Mikro- und Nanoelektronik Technische Universität Ilmenau. Institut für Festkörperelektronik Technische Hochschule Ilmenau. Sektion Physik und Technik Elektronischer Bauelemente
Weitere Angaben	Diss. Technische Hochschule Ilmenau Habilitation Technische Universität Ilmenau
Datensatztyp	Person
GND-Nummer	1171271263
Datensatz-ID	1171271263
Beteiligt an alle anzeigen The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices role of vacancy dynamics in two-dimensional memristive devices Six decades of research on 2D materials: progress, dead ends, and new horizons Failure analysis of wire bonding on strain gauge contact pads using FIB, SEM, and elemental mapping Reliability and degradation mechanisms of GaN high electron mobility transistors with short gate length Boron nitride switches for 5G and beyond Insulators for 2D nanoelectronics: the gap to bridge Insulators for 2D nanoelectronics: the gap to bridge Investigation of advanced GaN HEMTs for digital and high frequency applications Ladungsträgertransport in Nanodrahtstrulturen Two-dimensional electronics - prospects and challenges AlGaN HEMT based digital circuits on 3C‐SiC (111)/Si (111) pseudosubstrates Simulation of 50-nm gate graphene nanoribbon transistors Nanostrukturierte Ladungsträgergase für nicht-klassische Bauelementekonzepte Two-dimensional materials for electronic applications Nanometer-MOSFETs für Digital- und Hochfrequenzanwendungen AlGaN, GaN sensors for direct monitoring of fluids and bioreactions Coupled defect level recombination in the P-N junction Ambient and temperature dependent electric properties of backgate graphene transistors Top gated graphene transistors with different gate insulators The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si‐based RF bipolar transistors Die Modellierung und der Entwurf von GaAs-MESFET

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Katalog der Deutschen Nationalbibliothek

Frank Schwierz

The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices

role of vacancy dynamics in two-dimensional memristive devices

Six decades of research on 2D materials: progress, dead ends, and new horizons

Failure analysis of wire bonding on strain gauge contact pads using FIB, SEM, and elemental mapping

Reliability and degradation mechanisms of GaN high electron mobility transistors with short gate length

Boron nitride switches for 5G and beyond

Insulators for 2D nanoelectronics: the gap to bridge

Insulators for 2D nanoelectronics: the gap to bridge

Investigation of advanced GaN HEMTs for digital and high frequency applications

Ladungsträgertransport in Nanodrahtstrulturen

Two-dimensional electronics - prospects and challenges

AlGaN HEMT based digital circuits on 3C‐SiC (111)/Si (111) pseudosubstrates

Simulation of 50-nm gate graphene nanoribbon transistors

Nanostrukturierte Ladungsträgergase für nicht-klassische Bauelementekonzepte

Two-dimensional materials for electronic applications

Nanometer-MOSFETs für Digital- und Hochfrequenzanwendungen

AlGaN, GaN sensors for direct monitoring of fluids and bioreactions

Coupled defect level recombination in the P-N junction

Ambient and temperature dependent electric properties of backgate graphene transistors

Top gated graphene transistors with different gate insulators

The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si‐based RF bipolar transistors

Die Modellierung und der Entwurf von GaAs-MESFET