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Person

Wolfram Kwapil

Physiker

Name	Wolfram Kwapil
Ort	Deutschland
Geschlecht	männlich
Akademischer Grad bzw. Titel	Dr.
Beruf	Physiker (charakteristischer Beruf)
Variante	Wolfram Maximilian Kwapil
Beziehung	Freiburger Material-Forschungszentrum Fotovoltaik (Thema)
Quelle	FreiDok plus
Datensatztyp	Person
GND-Nummer	1171758065
Datensatz-ID	1171758065
Beteiligt an alle anzeigen Hydrogen in Silicon Solar Cells: The Role of Diffusion UV‐Induced Degradation of Industrial PERC, TOPCon, and HJT Solar Cells: The Next Big Reliability Challenge? Deciphering the Role of Hydrogen in the Degradation of Silicon Solar Cells under Light and Elevated Temperature Hot luminescence of two-dimensional electron hole systems in modulation-doped silicon Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers Hydrogen Reactions in c‐Si:B During Illumination at Room Temperature Reducing Time and Costs of FT-IR Studies of the Effect of SiNx, Dopants, and Emitter on Hydrogen Species in Si Wafers and Solar Cell Structures High lifetime Ga‐doped Cz‐Si for carrier‐selective junction solar cells Hydrogen reactions in c‐Si:B during illumination at room temperature Quantifying surface recombination — improvements in determination and simulation of the surface recombination parameter J0s The impact of different hydrogen configurations on light- and elevated-temperature- induced degradation Carrier lifetime limitation of industrial Ga-doped Cz-grown silicon after different solar cell process flows Towards accurate atom scale characterisation of hydrogen passivation of interfaces in TOPCon architectures Towards accurate atom scale characterisation of hydrogen passivation of interfaces in TOPCon architectures Influence of Dopant Elements on Degradation Phenomena in B‐ and Ga‐Doped Czochralski‐Grown Silicon Insights into the Hydrogen‐Related Mechanism behind Defect Formation during Light‐ and Elevated‐Temperature‐Induced Degradation Gallium‐Doped Silicon for High‐Efficiency Commercial Passivated Emitter and Rear Solar Cells Gallium‐doped silicon for high‐efficiency commercial passivated emitter and rear solar cells Influence of dopant elements on degradation phenomena in B‐ and Ga‐doped Czochralski‐grown silicon Insights into the hydrogen‐related mechanism behind defect formation during light‐ and elevated‐temperature‐induced degradation Temporary recovery of the defect responsible for light- and elevated temperature-induced degradation: Insights into the physical mechanisms behind LeTID Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption Taking monocrystalline silicon to the ultimate lifetime limit Firing temperature profile impact on light induced degradation in multicrystalline silicon Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature Alternative materials for crystalline silicon solar cells : Risks and implications Alternative materials for crystalline silicon solar cells : risks and implications

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Wolfram Kwapil

Hydrogen in Silicon Solar Cells: The Role of Diffusion

UV‐Induced Degradation of Industrial PERC, TOPCon, and HJT Solar Cells: The Next Big Reliability Challenge?

Deciphering the Role of Hydrogen in the Degradation of Silicon Solar Cells under Light and Elevated Temperature

Hot luminescence of two-dimensional electron hole systems in modulation-doped silicon

Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers

Hydrogen Reactions in c‐Si:B During Illumination at Room Temperature

Reducing Time and Costs of FT-IR Studies of the Effect of SiNx, Dopants, and Emitter on Hydrogen Species in Si Wafers and Solar Cell Structures

High lifetime Ga‐doped Cz‐Si for carrier‐selective junction solar cells

Hydrogen reactions in c‐Si:B during illumination at room temperature

Quantifying surface recombination — improvements in determination and simulation of the surface recombination parameter J0s

The impact of different hydrogen configurations on light- and elevated-temperature- induced degradation

Carrier lifetime limitation of industrial Ga-doped Cz-grown silicon after different solar cell process flows

Towards accurate atom scale characterisation of hydrogen passivation of interfaces in TOPCon architectures

Towards accurate atom scale characterisation of hydrogen passivation of interfaces in TOPCon architectures

Influence of Dopant Elements on Degradation Phenomena in B‐ and Ga‐Doped Czochralski‐Grown Silicon

Insights into the Hydrogen‐Related Mechanism behind Defect Formation during Light‐ and Elevated‐Temperature‐Induced Degradation

Gallium‐Doped Silicon for High‐Efficiency Commercial Passivated Emitter and Rear Solar Cells

Gallium‐doped silicon for high‐efficiency commercial passivated emitter and rear solar cells

Influence of dopant elements on degradation phenomena in B‐ and Ga‐doped Czochralski‐grown silicon

Insights into the hydrogen‐related mechanism behind defect formation during light‐ and elevated‐temperature‐induced degradation

Temporary recovery of the defect responsible for light- and elevated temperature-induced degradation: Insights into the physical mechanisms behind LeTID

Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption

Taking monocrystalline silicon to the ultimate lifetime limit

Firing temperature profile impact on light induced degradation in multicrystalline silicon

Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon

Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature

Alternative materials for crystalline silicon solar cells : Risks and implications

Alternative materials for crystalline silicon solar cells : risks and implications