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Person

Tim Niewelt

Ingenieur

Name	Tim Niewelt
Ort	Deutschland
Geschlecht	männlich
Beruf	Ingenieur (charakteristischer Beruf)
Beziehung	Werkstoffkunde (Studienfach)
Weitere Angaben	Doktorand am Fraunhofer Institut für Solare Energiesysteme, Univ. Freiburg im Breisgau, Technische Fakultät, Promotion 2017
Quelle	FreiDok plus
Datensatztyp	Person
GND-Nummer	1171760337
Datensatz-ID	1171760337
Beteiligt an alle anzeigen Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers Toward Highly Efficient Low-Carbon Footprint Solar Cells : Impact of High-Temperature Processing on Epitaxially Grown p-Type Silicon Wafers Toward highly efficient low‐carbon footprint solar cells: impact of high‐temperature processing on epitaxially grown p‐type silicon wafers Electronic band offset determination of oxides grown by atomic layer deposition on silicon Epitaxially grown p‐type silicon wafers eeady for cell efficiencies exceeding 25% Exploring hafnium oxide's potential for passivating contacts for silicon solar cells Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin films Quantifying surface recombination — improvements in determination and simulation of the surface recombination parameter J0s Silicon‐based passivating contacts: The TOPCon route Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon The impact of different hydrogen configurations on light- and elevated-temperature- induced degradation Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics Carrier lifetime limitation of industrial Ga-doped Cz-grown silicon after different solar cell process flows Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy Electronic characteristics of ultra‐thin passivation layers for silicon photovoltaics Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators Reassessment of the intrinsic bulk recombination in crystalline silicon Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon Gallium‐Doped Silicon for High‐Efficiency Commercial Passivated Emitter and Rear Solar Cells Experimental and theoretical study of oxygen precipitation and the resulting limitation of silicon solar cell wafers Extraordinarily high minority charge carrier lifetime observed in crystalline silicon Gallium‐doped silicon for high‐efficiency commercial passivated emitter and rear solar cells Influence of dopant elements on degradation phenomena in B‐ and Ga‐doped Czochralski‐grown silicon Temperature gradient image analysis to optimize an ultrafast regeneration of boron–oxygen-related defects Impact of postplating annealing on defect activation in boron-doped PERC solar cells Temporary recovery of the defect responsible for light- and elevated temperature-induced degradation: Insights into the physical mechanisms behind LeTID Lifetime-limiting defects in monocrystalline silicon Taking monocrystalline silicon to the ultimate lifetime limit Lifetime-limiting defects in monocrystalline silicon Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature Superacid-treated silicon surfaces: extending the limit of carrier lifetime for photovoltaic applications A unified parameterization of the formation of boron oxygen defects and their electrical activity Light-induced degradation and regeneration in n-type silicon

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Katalog der Deutschen Nationalbibliothek

Tim Niewelt

Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers

Toward Highly Efficient Low-Carbon Footprint Solar Cells : Impact of High-Temperature Processing on Epitaxially Grown p-Type Silicon Wafers

Toward highly efficient low‐carbon footprint solar cells: impact of high‐temperature processing on epitaxially grown p‐type silicon wafers

Electronic band offset determination of oxides grown by atomic layer deposition on silicon

Epitaxially grown p‐type silicon wafers eeady for cell efficiencies exceeding 25%

Exploring hafnium oxide's potential for passivating contacts for silicon solar cells

Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin films

Quantifying surface recombination — improvements in determination and simulation of the surface recombination parameter J0s

Silicon‐based passivating contacts: The TOPCon route

Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon

The impact of different hydrogen configurations on light- and elevated-temperature- induced degradation

Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics

Carrier lifetime limitation of industrial Ga-doped Cz-grown silicon after different solar cell process flows

Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy

Electronic characteristics of ultra‐thin passivation layers for silicon photovoltaics

Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators

Reassessment of the intrinsic bulk recombination in crystalline silicon

Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Gallium‐Doped Silicon for High‐Efficiency Commercial Passivated Emitter and Rear Solar Cells

Experimental and theoretical study of oxygen precipitation and the resulting limitation of silicon solar cell wafers

Extraordinarily high minority charge carrier lifetime observed in crystalline silicon

Gallium‐doped silicon for high‐efficiency commercial passivated emitter and rear solar cells

Influence of dopant elements on degradation phenomena in B‐ and Ga‐doped Czochralski‐grown silicon

Temperature gradient image analysis to optimize an ultrafast regeneration of boron–oxygen-related defects

Impact of postplating annealing on defect activation in boron-doped PERC solar cells

Temporary recovery of the defect responsible for light- and elevated temperature-induced degradation: Insights into the physical mechanisms behind LeTID

Lifetime-limiting defects in monocrystalline silicon

Taking monocrystalline silicon to the ultimate lifetime limit

Lifetime-limiting defects in monocrystalline silicon

Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon

Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature

Superacid-treated silicon surfaces: extending the limit of carrier lifetime for photovoltaic applications

A unified parameterization of the formation of boron oxygen defects and their electrical activity

Light-induced degradation and regeneration in n-type silicon