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Dago M. de Leeuw

Physiker

Name	Dago M. de Leeuw
Ort	Sonstiges Ausland / Unbekanntes Land
Geschlecht	männlich
Akademischer Grad bzw. Titel	Prof. Dr.
Beruf	Physiker (charakteristischer Beruf)
Variante	Dago de Leeuw D. de Leeuw D. M. De Leeuw D. M. DeLeeuw
Weitere Angaben	Philips Research Labs, Eindhoven, The Netherlands
Datensatztyp	Person
GND-Nummer	1201143225
Datensatz-ID	1201143225
Beteiligt an alle anzeigen Microstructured organic ferroelectric thin film capacitors by solution micromolding Fundamental Limitations for Electroluminescence in Organic Dual‐Gate Field‐Effect Transistors The Curious Out‐of‐Plane Conductivity of PEDOT:PSS Light Emission in the Unipolar Regime of Ambipolar Organic Field‐Effect Transistors Charge Trapping by Self‐Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field‐Effect Transistors Operational Stability of Organic Field‐Effect Transistors Operational stability of organic field-effect transistors Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field‐Effect Transistors Anomalous current transients in organic field-effect transistors Proton migration mechanism for operational instabilities in organic field-effect transistors Proton migration mechanism for the instability of organic field-effect transistors

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Dago M. de Leeuw

Microstructured organic ferroelectric thin film capacitors by solution micromolding

Fundamental Limitations for Electroluminescence in Organic Dual‐Gate Field‐Effect Transistors

The Curious Out‐of‐Plane Conductivity of PEDOT:PSS

Light Emission in the Unipolar Regime of Ambipolar Organic Field‐Effect Transistors

Charge Trapping by Self‐Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field‐Effect Transistors

Operational Stability of Organic Field‐Effect Transistors

Operational stability of organic field-effect transistors

Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field‐Effect Transistors

Anomalous current transients in organic field-effect transistors

Proton migration mechanism for operational instabilities in organic field-effect transistors

Proton migration mechanism for the instability of organic field-effect transistors