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Surya Abhishek Singaraju

Name	Surya Abhishek Singaraju
Ort	Sonstiges Ausland / Unbekanntes Land
Geschlecht	männlich
Akademischer Grad bzw. Titel	Dr.-Ing. (an der Fakultät für Elektrotechnik und Informationstechnik des Karlsruher Instituts für Technologie (KIT)) (2021) M.Sc.
Variante	Surya Singaraju
Beziehung	Physik (University of Hyderabad, India) (Studienfach)
Datensatztyp	Person
GND-Nummer	1232507059
Datensatz-ID	1232507059
Beteiligt an alle anzeigen Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors Synthesis and Characterization of High‐Entropy CrMoNbTaVW Thin Films Using High‐Throughput Methods Synthesis and Characterization of High‐Entropy CrMoNbTaVW Thin Films Using High‐Throughput Methods Synthesis and Characterization of High‐Entropy CrMoNbTaVW Thin Films Using High‐Throughput Methods Development of Fully Printed Oxide Electronics for Flexible Substrates Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors Front Cover: Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors (ChemElectroChem 13/2020) Tailored Silicon/Carbon Compounds for Printed Li–Ion Anodes Tailored Silicon/Carbon Compounds for Printed Li–Ion Anodes Cover Picture: Tailored Silicon/Carbon Compounds for Printed Li–Ion Anodes (Batteries & Supercaps 8/2020) Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors

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Katalog der Deutschen Nationalbibliothek

Surya Abhishek Singaraju

Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors

Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates

Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors

Synthesis and Characterization of High‐Entropy CrMoNbTaVW Thin Films Using High‐Throughput Methods

Synthesis and Characterization of High‐Entropy CrMoNbTaVW Thin Films Using High‐Throughput Methods

Synthesis and Characterization of High‐Entropy CrMoNbTaVW Thin Films Using High‐Throughput Methods

Development of Fully Printed Oxide Electronics for Flexible Substrates

Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates

Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates

Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors

Front Cover: Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors (ChemElectroChem 13/2020)

Tailored Silicon/Carbon Compounds for Printed Li–Ion Anodes

Tailored Silicon/Carbon Compounds for Printed Li–Ion Anodes

Cover Picture: Tailored Silicon/Carbon Compounds for Printed Li–Ion Anodes (Batteries & Supercaps 8/2020)

Adhesive ion‐gel as gate insulator of electrolyte‐gated transistors