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Philipp Döring

Name	Philipp Döring
Ort	Deutschland
Geschlecht	männlich
Variante	Philipp Maximilian Döring (vollständiger Name) P. Döring
Beziehung	Leistungselektronik (Studienfach)
Weitere Angaben	Dissertation 2021, Albert-Ludwigs-Universität Freiburg im Breisgau, Technische Fakultät
Quelle	FreiDok plus
Datensatztyp	Person
GND-Nummer	1237139570
Datensatz-ID	1237139570
Beteiligt an alle anzeigen Advances in GaN devices and circuits at higher mm-wave frequencies GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI Voltage-margin limiting mechanisms of AlScN-based HEMTs Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures Building blocks for GaN power integration Experimental evaluation of the device design and process technology of the current aperture vertical electron transistor for power electronics applications Growth and fabrication of quasivertical current aperture vertical electron transistor structures Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability Technology of GaN-based large area CAVETs with co-integrated HEMTs Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures Optimization of metal‐organic chemical vapor deposition regrown n‐GaN

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Philipp Döring

Advances in GaN devices and circuits at higher mm-wave frequencies

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

Voltage-margin limiting mechanisms of AlScN-based HEMTs

Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures

On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors

Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures

Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Building blocks for GaN power integration

Experimental evaluation of the device design and process technology of the current aperture vertical electron transistor for power electronics applications

Growth and fabrication of quasivertical current aperture vertical electron transistor structures

Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability

Technology of GaN-based large area CAVETs with co-integrated HEMTs

Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN

Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures

Optimization of metal‐organic chemical vapor deposition regrown n‐GaN