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Rüdiger Quay (1971-)

Physiker

Name	Rüdiger Quay
Zeit	1971- (Lebensdaten)
Ort	Deutschland
Akademischer Grad bzw. Titel	Dipl.Phys., Dipl.Vw., Dr.techn.
Beruf	Physiker (charakteristischer Beruf) Wirtschaftswissenschaftler
Weitere Angaben	Diss. Fachbereich Halbleitertechnik; tätig am Institut für Mikroelektronik der Techn. Univ. Wien u. dem Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Datensatztyp	Person
GND-Nummer	123732123
Datensatz-ID	123732123
Beteiligt an alle anzeigen Chemical Vapor Deposition of Nitrides by Carbon‐Free Brominated Precursors Compact, scalable and reliable reconfigurable switch matrix for Ka-band geostationary communication satellites Continuous current sensing GaN half-bridge ICs 400 ghz 8×1 transmitter and receiver front-ends with metastructured on-chip antennas AlScN/GaN multichannel heterostructures grown by metal-organic chemical vapor deposition CMOS circuits for thermoelectric energy harvesters - challenges in implementing miniaturized, ultra-low-voltage interfaces Comparative life cycle assessment of silicon and silicon carbide substrates for RF applications High-contrast absorption magnetometry in the visible to near-infrared range with nitrogen-vacancy ensembles Higher order thermal impedance extraction of GaN power HEMTs by I-V measurements Impact of string connection and contact defects on electrical current distribution in solar cells and modules: a model validated by magnetic field imaging MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio Self-compatible transistors in GaN-on-Si technology for high-voltage cascodes Stickstoffdotierte Diamant-Dünnschichten für das Quantencomputing Thermal characterization of GaN Power HEMTs by transient I – V curves, infrared microscopy, and thermal simulation A > 120-GHz bandwidth, >20-dBm pout, <6-dB noise-figure distributed amplifier MMIC in a GaN-on-SiC HEMT technology Entwurf und Charakterisierung eines GaN Multilevel Gate-Treibers Experimental evaluation of the spontaneous polarization using the ferroelectric properties of AlScN Extraction of the thermal resistance and the thermal capacitance of GaN power HEMTs by using pulsed I–V measurements Investigations of sustainability and reusability improvements of high valued electronic printed circuit boards (PCBs) Monolithically integrated GaN power stage for more sustainable 48 V DC–DC converters Theoretical limits of the matching bandwidth and output power of AlScN-based HEMTs Thermal characterization of GaN power switch HEMTs on different substrate materials Unified scalable model for HEMT-based planar schottky diodes 2.6- and 4-W E-band GaN power amplifiers with a peak efficiency of 22% and 15.3% A 99.74% efficient capacitor-charging converter using partial power processing for electrocalorics Advances in GaN devices and circuits at higher mm-wave frequencies Efficient talkative power conversion with quasi-square-wave zero-voltage switching hysteretic current control Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI How highly efficient power electronics transfers high electrocaloric material performance to heat pump systems Leistungsverstärker für den Einsatz in energiesparsamer Informations- und Kommunikationstechnik Monolithically integrated GaN gate drivers - a design guide Monolithically Integrated GaN Gate Drivers- A Design Guide Three-phase motor inverter and current sensing GaN power IC Voltage-margin limiting mechanisms of AlScN-based HEMTs Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition 16-Way Ka-band power combiner using novel waveguide transitions A wideband E/W-band low-noise amplifier MMIC in a 70-nm gate-length GaN HEMT technology Broadband 100-W Ka-band SSPA based on GaN power amplifiers Broadband 400 GHz on-chip antenna with a metastructured ground plane and dielectric resonator GaN active rectifier diode Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer Broadband 400-GHz InGaAs mHEMT transmitter and receiver S-MMICs Building blocks for GaN power integration Harmonic-injection class-Em/Fn power amplifier with finite DC-feed inductance and isolation circuit Low-power differential input to single-ended output GaN RF-DAC for RF-signal generation PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN Metal‐lorganic chemical vapor deposition of aluminum scandium nitride Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer Optimization of metal‐organic chemical vapor deposition regrown n‐GaN Wideband Active Load Modulation in RF Power Amplifiers High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication Differential Switched Mode RF Power Amplifiers AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution Security Research Conference - 11th Future Security : Berlin, September 13-14, 2016 : proceedings Growth model investigation for AlN/Al (Ga) InN interface growth by plasma‐assisted molecular beam epitaxy for high electron mobility transistor applications GaN‐based high voltage transistors for efficient power switching

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Rüdiger Quay (1971-)

Chemical Vapor Deposition of Nitrides by Carbon‐Free Brominated Precursors

Compact, scalable and reliable reconfigurable switch matrix for Ka-band geostationary communication satellites

Continuous current sensing GaN half-bridge ICs

400 ghz 8×1 transmitter and receiver front-ends with metastructured on-chip antennas

AlScN/GaN multichannel heterostructures grown by metal-organic chemical vapor deposition

CMOS circuits for thermoelectric energy harvesters - challenges in implementing miniaturized, ultra-low-voltage interfaces

Comparative life cycle assessment of silicon and silicon carbide substrates for RF applications

High-contrast absorption magnetometry in the visible to near-infrared range with nitrogen-vacancy ensembles

Higher order thermal impedance extraction of GaN power HEMTs by I-V measurements

Impact of string connection and contact defects on electrical current distribution in solar cells and modules: a model validated by magnetic field imaging

MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio

Self-compatible transistors in GaN-on-Si technology for high-voltage cascodes

Stickstoffdotierte Diamant-Dünnschichten für das Quantencomputing

Thermal characterization of GaN Power HEMTs by transient I – V curves, infrared microscopy, and thermal simulation

A > 120-GHz bandwidth, >20-dBm pout, <6-dB noise-figure distributed amplifier MMIC in a GaN-on-SiC HEMT technology

Entwurf und Charakterisierung eines GaN Multilevel Gate-Treibers

Experimental evaluation of the spontaneous polarization using the ferroelectric properties of AlScN

Extraction of the thermal resistance and the thermal capacitance of GaN power HEMTs by using pulsed I–V measurements

Investigations of sustainability and reusability improvements of high valued electronic printed circuit boards (PCBs)

Monolithically integrated GaN power stage for more sustainable 48 V DC–DC converters

Theoretical limits of the matching bandwidth and output power of AlScN-based HEMTs

Thermal characterization of GaN power switch HEMTs on different substrate materials

Unified scalable model for HEMT-based planar schottky diodes

2.6- and 4-W E-band GaN power amplifiers with a peak efficiency of 22% and 15.3%

A 99.74% efficient capacitor-charging converter using partial power processing for electrocalorics

Advances in GaN devices and circuits at higher mm-wave frequencies

Efficient talkative power conversion with quasi-square-wave zero-voltage switching hysteretic current control

Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

How highly efficient power electronics transfers high electrocaloric material performance to heat pump systems

Leistungsverstärker für den Einsatz in energiesparsamer Informations- und Kommunikationstechnik

Monolithically integrated GaN gate drivers - a design guide

Monolithically Integrated GaN Gate Drivers- A Design Guide

Three-phase motor inverter and current sensing GaN power IC

Voltage-margin limiting mechanisms of AlScN-based HEMTs

Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

16-Way Ka-band power combiner using novel waveguide transitions

A wideband E/W-band low-noise amplifier MMIC in a 70-nm gate-length GaN HEMT technology

Broadband 100-W Ka-band SSPA based on GaN power amplifiers

Broadband 400 GHz on-chip antenna with a metastructured ground plane and dielectric resonator

GaN active rectifier diode

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Broadband 400-GHz InGaAs mHEMT transmitter and receiver S-MMICs

Building blocks for GaN power integration

Harmonic-injection class-Em/Fn power amplifier with finite DC-feed inductance and isolation circuit

Low-power differential input to single-ended output GaN RF-DAC for RF-signal generation

PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors

Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN

Metal‐lorganic chemical vapor deposition of aluminum scandium nitride

Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer

Optimization of metal‐organic chemical vapor deposition regrown n‐GaN

Wideband Active Load Modulation in RF Power Amplifiers

High‐Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

Differential Switched Mode RF Power Amplifiers

AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution

Security Research Conference - 11th Future Security : Berlin, September 13-14, 2016 : proceedings

Growth model investigation for AlN/Al (Ga) InN interface growth by plasma‐assisted molecular beam epitaxy for high electron mobility transistor applications

GaN‐based high voltage transistors for efficient power switching