Detailansicht

Wissensnetz

Person

Andreas Klein (1961-)

Hochschullehrer

Name	Andreas Klein
Zeit	1961- (Lebensdaten)
Ort	Darmstadt (Wirkungsort) Deutschland
Geschlecht	männlich
Akademischer Grad bzw. Titel	Prof. Dr.
Beruf	Hochschullehrer (charakteristischer Beruf) Werkstoffwissenschaftler
Beziehung	Technische Universität Darmstadt. Materialwissenschaft
Quelle	Homepage: https://www.mawi.tu-darmstadt.de/esm/fachgebiet_esm/unser_team_esm/unser_team_esm_details_99584.de.jsp (Stand: 28.07.2022)
Datensatztyp	Person
GND-Nummer	1263882137
Datensatz-ID	1263882137
Beteiligt an alle anzeigen A Single Model for the Thermodynamics and Kinetics of Metal Exsolution from Perovskite Oxides Electronic Structure of Functionalized Semiconductor Surfaces and Interfaces for Photoelectrochemical Water Splitting Electronic structure of sodium niobate - Fermi energy, band gap, defects, and transport properties Electrostatic Boundary Conditions and (Electro)chemical Interface Stability High open-circuit voltage in single-crystalline n-type SnS/MoO₃ photovoltaics Tailoring high-energy storage NaNbO₃-based materials from antiferroelectric to relaxor states Correction to: The Fermi energy as common parameter to describe charge compensation mechanisms: a path to Fermi level engineering of oxide electroceramics The Fermi energy as common parameter to describe charge compensation mechanisms: A path to Fermi level engineering of oxide electroceramics Electrostatic Boundary Conditions and (Electro) chemical Interface Stability Charges and Charged Defects in Pb-based Ferro- and Antiferroelectric Ceramics Correction to: The Fermi energy as common parameter to describe charge compensation mechanisms: a path to Fermi level engineering of oxide electroceramics Defect level identification in acceptor-doped polycrystalline barium titanate Na1/2Bi1/2TiO3-Based Piezoceramics for High-Power Applications The Fermi energy as common parameter to describe charge compensation mechanisms : A path to Fermi level engineering of oxide electroceramics Band structure of indium oxide: Indirect versus direct band gap Band symmetries of GaSe(0001) studied by spin-resolved electron spectroscopy using circularly polarized radiation Barrier height at (Ba,Sr)TiO₃/Pt interfaces studied by photoemission Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄ Density-functional-theory calculations of electronic band structure of single-crystal and single-layer WS₂ Efficacy of the DFT + U formalism for modeling hole polarons in perovskite oxides Electroless Nanoplating of Pd−Pt Alloy Nanotube Networks: Catalysts with Full Compositional Control for the Methanol Oxidation Reaction Electronic band structure of single-crystal and single-layer WS₂: Influence of interlayer van der Waals interactions Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States Field-Induced Phase Transition of Lead-Free Antiferroelectric Niobates First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects First-principles study of the structure and stability of oxygen defects in zinc oxide Influence of Defects on the Schottky Barrier Height at BaTiO₃/RuO₂ Interfaces Influence of orbital contributions to the valence band alignment of Bi2O3, Fe2O3, BiFeO3, and Bi0.5Na0.5TiO3 Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces Nature of the Band Gap of In₂O₃ Revealed by First-Principles Calculations and X-Ray Spectroscopy PbTiO₃/SrTiO₃ interface: Energy band alignment and its relation to the limits of Fermi level variation Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy Reversible metal-insulator transition of Ar-irradiated LaAlO₃/SrTiO₃ interfaces Role of copper interstitials in CuInSe₂: First-principles calculations Schottky Solar Cells with CuInS₂ Nanocrystals as Absorber Material Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning Surface states, surface potentials, and segregation at surfaces of tin-doped In₂O₃ Influence of Defects on the Schottky Barrier Height at BaTiO 3/RuO 2 Interfaces 12% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate Band alignment at the BaCuSeF/ZnTe interface Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles Band offset at the CuGaSe₂∕In₂S₃ heterointerface Band offsets at the ZnSe/CuGaSe₂(001) heterointerface Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O₃ ceramics with different electrodes Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces Chemical interaction of Na with cleaved (011) surfaces of CuInSe₂ Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage Domain wall stability in ferroelectrics with space charges Electroceramics XVII - The 2020 virtual conference experience at TU Darmstadt Electronic passivation of Si(111) by Ga–Se half-sheet termination Electronic properties of BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF/ZnPc interfaces Electronic properties of In₂O₃ surfaces Electronic structure of In₂O₃ from resonant x-ray emission spectroscopy Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination Energy band alignment at the nanoscale

Hinweis

Die Betaversion beinhaltet noch nicht alle Funktionen und Informationen des Katalogs des DNB-Portals. Falls Sie Informationen vermissen oder ein Medium bestellen wollen, besuchen Sie bitte die entsprechende Seite im Katalog des DNB-Portals über folgenden Link:

Katalog der Deutschen Nationalbibliothek

Andreas Klein (1961-)

A Single Model for the Thermodynamics and Kinetics of Metal Exsolution from Perovskite Oxides

Electronic Structure of Functionalized Semiconductor Surfaces and Interfaces for Photoelectrochemical Water Splitting

Electronic structure of sodium niobate - Fermi energy, band gap, defects, and transport properties

Electrostatic Boundary Conditions and (Electro)chemical Interface Stability

High open-circuit voltage in single-crystalline n-type SnS/MoO₃ photovoltaics

Tailoring high-energy storage NaNbO₃-based materials from antiferroelectric to relaxor states

Correction to: The Fermi energy as common parameter to describe charge compensation mechanisms: a path to Fermi level engineering of oxide electroceramics

The Fermi energy as common parameter to describe charge compensation mechanisms: A path to Fermi level engineering of oxide electroceramics

Electrostatic Boundary Conditions and (Electro) chemical Interface Stability

Charges and Charged Defects in Pb-based Ferro- and Antiferroelectric Ceramics

Correction to: The Fermi energy as common parameter to describe charge compensation mechanisms: a path to Fermi level engineering of oxide electroceramics

Defect level identification in acceptor-doped polycrystalline barium titanate

Na1/2Bi1/2TiO3-Based Piezoceramics for High-Power Applications

The Fermi energy as common parameter to describe charge compensation mechanisms : A path to Fermi level engineering of oxide electroceramics

Band structure of indium oxide: Indirect versus direct band gap

Band symmetries of GaSe(0001) studied by spin-resolved electron spectroscopy using circularly polarized radiation

Barrier height at (Ba,Sr)TiO₃/Pt interfaces studied by photoemission

Changes in Electronic Structure and Chemical Bonding upon Crystallization of the Phase Change Material GeSb₂Te₄

Density-functional-theory calculations of electronic band structure of single-crystal and single-layer WS₂

Efficacy of the DFT + U formalism for modeling hole polarons in perovskite oxides

Electroless Nanoplating of Pd−Pt Alloy Nanotube Networks: Catalysts with Full Compositional Control for the Methanol Oxidation Reaction

Electronic band structure of single-crystal and single-layer WS₂: Influence of interlayer van der Waals interactions

Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard x-ray photoemission spectroscopy

Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States

Field-Induced Phase Transition of Lead-Free Antiferroelectric Niobates

First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects

First-principles study of the structure and stability of oxygen defects in zinc oxide

Influence of Defects on the Schottky Barrier Height at BaTiO₃/RuO₂ Interfaces

Influence of orbital contributions to the valence band alignment of Bi2O3, Fe2O3, BiFeO3, and Bi0.5Na0.5TiO3

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces

Nature of the Band Gap of In₂O₃ Revealed by First-Principles Calculations and X-Ray Spectroscopy

PbTiO₃/SrTiO₃ interface: Energy band alignment and its relation to the limits of Fermi level variation

Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy

Polarization dependence of ZnO Schottky barriers revealed by photoelectron spectroscopy

Reversible metal-insulator transition of Ar-irradiated LaAlO₃/SrTiO₃ interfaces

Role of copper interstitials in CuInSe₂: First-principles calculations

Schottky Solar Cells with CuInS₂ Nanocrystals as Absorber Material

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Surface states, surface potentials, and segregation at surfaces of tin-doped In₂O₃

Influence of Defects on the Schottky Barrier Height at BaTiO 3/RuO 2 Interfaces

12% efficient CdTe/CdS thin film solar cells deposited by low-temperature close space sublimation

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

Band alignment at the BaCuSeF/ZnTe interface

Band lineup between CdS and ultra high vacuum-cleaved CuInS₂ single crystals

Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles

Band offset at the CuGaSe₂∕In₂S₃ heterointerface

Band offsets at the ZnSe/CuGaSe₂(001) heterointerface

Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O₃ ceramics with different electrodes

Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces

Chemical interaction of Na with cleaved (011) surfaces of CuInSe₂

Detailed photoluminescence studies of thin film Cu₂S for determination of quasi-Fermi level splitting and defect levels

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage

Domain wall stability in ferroelectrics with space charges

Electroceramics XVII - The 2020 virtual conference experience at TU Darmstadt

Electronic passivation of Si(111) by Ga–Se half-sheet termination

Electronic properties of BaCuChF (Ch=S,Se,Te) surfaces and BaCuSeF/ZnPc interfaces

Electronic properties of In₂O₃ surfaces

Electronic structure of In₂O₃ from resonant x-ray emission spectroscopy

Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination

Energy band alignment at the nanoscale