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Antony George

Wissenschaftlicher Mitarbeiter

Name	Antony George
Ort	Deutschland
Akademischer Grad bzw. Titel	Dr.
Beruf	Wissenschaftlicher Mitarbeiter (charakteristischer Beruf)
Variante	A. George
Beziehung	Friedrich-Schiller-Universität Jena. Institut für Angewandte Physik Friedrich-Schiller-Universität Jena. Institut für Festkörperphysik Friedrich-Schiller-Universität Jena. Institut für Physikalische Chemie Abbe Center of Photonics Nanotechnologie (Thema)
Weitere Angaben	Arbeitsbereich: Angewandte physikalische Chemie und molekulare Nanotechnologie
Quelle	Homepage: https://www.ipc.uni-jena.de/mitarbeiter (Stand: 16.12.2022)
Datensatztyp	Person
GND-Nummer	1275756379
Datensatz-ID	1275756379
Beteiligt an alle anzeigen All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts Towards Double Resonant Cavity Enhanced Second Harmonic Generation in Monolayer MoS₂ Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction Charge‐State‐Enhanced Ion Sputtering of Metallic Gold Nanoislands Nanoscale friction on MoS2/graphene heterostructures Structural and electronic properties of MoS2 and MoSe2 monolayers grown by chemical vapor deposition on Au(111)† Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectric In-fibre second-harmonic generation with embedded two-dimensional materials Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications Giant persistent photoconductivity in monolayer MoS2 field-effect transistors Facile Resist‐Free Nanopatterning of Monolayers of MoS 2 by Focused Ion‐Beam Milling

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Antony George

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Towards Double Resonant Cavity Enhanced Second Harmonic Generation in Monolayer MoS₂

Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction

Charge‐State‐Enhanced Ion Sputtering of Metallic Gold Nanoislands

Nanoscale friction on MoS2/graphene heterostructures

Structural and electronic properties of MoS2 and MoSe2 monolayers grown by chemical vapor deposition on Au(111)†

Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

High‐Performance Monolayer MoS 2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO 2 Gate Dielectric

In-fibre second-harmonic generation with embedded two-dimensional materials

Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides

Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications

Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides

Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Facile Resist‐Free Nanopatterning of Monolayers of MoS 2 by Focused Ion‐Beam Milling