Detailansicht

Wissensnetz

Person

Lutz Kirste (1971-)

Name	Lutz Kirste
Zeit	1971- (Lebensdaten)
Ort	Sonstiges Ausland / Unbekanntes Land
Weitere Angaben	Diss. Fakultät für Chemie, Pharmazie und Geowissenschaften, Studium der Mineralogie
Datensatztyp	Person
GND-Nummer	129064831
Datensatz-ID	129064831
Beteiligt an alle anzeigen Understanding Interfaces in AlScN/GaN Heterostructures Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures Online and ex situ damage characterization techniques for fiber-reinforced composites under ultrasonic cyclic three-point bending Ultrasonic reconsolidation of separated CF-PEEK composite layers at 20 kHz — an experimental study on parameter optimization and Ex-situ characterization Understanding interfaces in AlScN/GaN heterostructures Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride A Chemical Vapor Deposition Diamond Reactor for Controlled Thin‐Film Growth with Sharp Layer Interfaces A chemical vapor deposition diamond reactor for controlled thin‐film growth with sharp layer interfaces Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition Growth Optimization of Nonpolar Al 0.7 Sc 0.3 N (11 2 ¯ 0)/Al 2 O 3 (1 1 ¯ 02) Thin Films Using Reactive Magnetron Sputter Epitaxy A Chemical Vapor Deposition Diamond Reactor for Controlled Thin‐Film Growth with Sharp Layer Interfaces Manipulation of the In Situ Nitrogen‐Vacancy Doping Efficiency in CVD‐Grown Diamond Growth Optimization of Nonpolar Al 0.7 Sc 0.3 N (11 2 ¯ 0)/Al 2 O 3 (1 1 ¯ 02) Thin Films Using Reactive Magnetron Sputter Epitaxy Al1-xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal ExpansionAl1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion Growth optimization of nonpolar Al0.7Sc0.3n(1120)/Al2O3(1102) thin films using reactive magnetron sputter epitaxy Influence of structural properties on the ferroelectric behavior of hexagonal AlScN Large-scale defect clusters with hexagonal honeycomb-like arrangement in ammonothermal GaN crystals Leakage mechanism in AlxGa1−xN/GaN heterostructures with AlN interlayer Manipulation of the in situ nitrogen‐vacancy doping efficiency in CVD‐grown diamond Publisher's Note: “Influence of structural properties on the ferroelectric behavior of hexagonal AlScN” [J. Appl. Phys. 132, 114101 (2022)] Rayleigh waves in nonpolar Al0.7Sc0.3N(1120) films with enhanced electromechanical coupling and quality factor Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer 3D X-ray microscopy of ultrasonically welded aluminum/fiber-reinforced polymer hybrid joints Characterization of structural defects in (Cd,Zn)Te crystals grown by the travelling heater method Growth and fabrication of quasivertical current aperture vertical electron transistor structures Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN Toward AlGaN Focal Plane Arrays for Solar‐Blind Ultraviolet Detection Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N (112 ¯ 0) thin films Metal‐lorganic chemical vapor deposition of aluminum scandium nitride Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer Optimization of metal‐organic chemical vapor deposition regrown n‐GaN Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution Potassium tantalate-niobate mixed crystal thin films for applications in nonlinear integrated optics Diamond nanophotonics Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten

Hinweis

Die Betaversion beinhaltet noch nicht alle Funktionen und Informationen des Katalogs des DNB-Portals. Falls Sie Informationen vermissen oder ein Medium bestellen wollen, besuchen Sie bitte die entsprechende Seite im Katalog des DNB-Portals über folgenden Link:

Katalog der Deutschen Nationalbibliothek

Lutz Kirste (1971-)

Understanding Interfaces in AlScN/GaN Heterostructures

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures

Online and ex situ damage characterization techniques for fiber-reinforced composites under ultrasonic cyclic three-point bending

Ultrasonic reconsolidation of separated CF-PEEK composite layers at 20 kHz — an experimental study on parameter optimization and Ex-situ characterization

Understanding interfaces in AlScN/GaN heterostructures

Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride

A Chemical Vapor Deposition Diamond Reactor for Controlled Thin‐Film Growth with Sharp Layer Interfaces

A chemical vapor deposition diamond reactor for controlled thin‐film growth with sharp layer interfaces

Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition

Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy

Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

Growth Optimization of Nonpolar Al 0.7 Sc 0.3 N (11 2 ¯ 0)/Al 2 O 3 (1 1 ¯ 02) Thin Films Using Reactive Magnetron Sputter Epitaxy

A Chemical Vapor Deposition Diamond Reactor for Controlled Thin‐Film Growth with Sharp Layer Interfaces

Manipulation of the In Situ Nitrogen‐Vacancy Doping Efficiency in CVD‐Grown Diamond

Growth Optimization of Nonpolar Al 0.7 Sc 0.3 N (11 2 ¯ 0)/Al 2 O 3 (1 1 ¯ 02) Thin Films Using Reactive Magnetron Sputter Epitaxy

Al1-xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal ExpansionAl1−xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion

Growth optimization of nonpolar Al0.7Sc0.3n(1120)/Al2O3(1102) thin films using reactive magnetron sputter epitaxy

Influence of structural properties on the ferroelectric behavior of hexagonal AlScN

Large-scale defect clusters with hexagonal honeycomb-like arrangement in ammonothermal GaN crystals

Leakage mechanism in AlxGa1−xN/GaN heterostructures with AlN interlayer

Manipulation of the in situ nitrogen‐vacancy doping efficiency in CVD‐grown diamond

Publisher's Note: “Influence of structural properties on the ferroelectric behavior of hexagonal AlScN” [J. Appl. Phys. 132, 114101 (2022)]

Rayleigh waves in nonpolar Al0.7Sc0.3N(1120) films with enhanced electromechanical coupling and quality factor

Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

3D X-ray microscopy of ultrasonically welded aluminum/fiber-reinforced polymer hybrid joints

Characterization of structural defects in (Cd,Zn)Te crystals grown by the travelling heater method

Growth and fabrication of quasivertical current aperture vertical electron transistor structures

Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition

Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties

Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN

Toward AlGaN Focal Plane Arrays for Solar‐Blind Ultraviolet Detection

Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N (112 ¯ 0) thin films

Metal‐lorganic chemical vapor deposition of aluminum scandium nitride

Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures

Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer

Optimization of metal‐organic chemical vapor deposition regrown n‐GaN

Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films

Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films

Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films

AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution

Potassium tantalate-niobate mixed crystal thin films for applications in nonlinear integrated optics

Diamond nanophotonics

Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures

Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs

Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers

Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten

Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten