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Oliver Bierwagen (1975-)

Physiker

Name	Oliver Bierwagen
Zeit	1975- (Lebensdaten)
Ort	Berlin (Geburtsort) Deutschland
Beruf	Physiker (charakteristischer Beruf)
Quelle	AM Metadaten
Datensatztyp	Person
GND-Nummer	133282635
Datensatz-ID	133282635
Beteiligt an alle anzeigen Enabling 2D Electron Gas with High Room‐Temperature Electron Mobility Exceeding 100 cm 2 Vs −1 at a Perovskite Oxide Interface Tuning the Surface Electron Accumulation Layer of In 2 O 3 by Adsorption of Molecular Electron Donors and Acceptors Disorder–Order Transition in Ga 2 O 3 and Its Solid Solution with In 2 O 3 upon Thermal Annealing Tuning the Surface Electron Accumulation Layer of In2O3 by Adsorption of Molecular Electron Donors and Acceptors Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga 2 O 3 Epitaxy and its Impact on the In‐Plane Electronic Conduction Confinement of Electrons at the LaInO 3/BaSnO 3 Heterointerface Tackling Disorder in γ‐Ga 2 O 3 Tackling disorder in γ-Ga2O3 Ultrawide-bandgap semiconductors: An overview Two-dimensional electron gas of the In2O3 surface: enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping Towards Understanding the Cross‐Sensitivity of In 2 O 3 Based Ozone Sensors: Effects of O 3, O 2 and H 2 O Adsorption at In 2 O 3 (111) Surfaces Electrical conductivity and gas-sensing properties of Mg-doped and undoped single-crystalline In 2 O 3 thin films: bulk vs. surface Growth and anisotropic transport properties of self assembled InAs nanostructures in InP Growth and anisotropic transport properties of self assembled InAs nanostructures in InP

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Katalog der Deutschen Nationalbibliothek

Oliver Bierwagen (1975-)

Enabling 2D Electron Gas with High Room‐Temperature Electron Mobility Exceeding 100 cm 2 Vs −1 at a Perovskite Oxide Interface

Tuning the Surface Electron Accumulation Layer of In 2 O 3 by Adsorption of Molecular Electron Donors and Acceptors

Disorder–Order Transition in Ga 2 O 3 and Its Solid Solution with In 2 O 3 upon Thermal Annealing

Tuning the Surface Electron Accumulation Layer of In2O3 by Adsorption of Molecular Electron Donors and Acceptors

Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga 2 O 3 Epitaxy and its Impact on the In‐Plane Electronic Conduction

Confinement of Electrons at the LaInO 3/BaSnO 3 Heterointerface

Tackling Disorder in γ‐Ga 2 O 3

Tackling disorder in γ-Ga2O3

Ultrawide-bandgap semiconductors: An overview

Two-dimensional electron gas of the In2O3 surface: enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping

Towards Understanding the Cross‐Sensitivity of In 2 O 3 Based Ozone Sensors: Effects of O 3, O 2 and H 2 O Adsorption at In 2 O 3 (111) Surfaces

Electrical conductivity and gas-sensing properties of Mg-doped and undoped single-crystalline In 2 O 3 thin films: bulk vs. surface

Growth and anisotropic transport properties of self assembled InAs nanostructures in InP

Growth and anisotropic transport properties of self assembled InAs nanostructures in InP