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Heterobipolartransistor

Bipolartransistor, Heterostruktur-Bauelement

Subject heading	Heterobipolartransistor
Synonym	HBT Heteroübergangsbipolartransistor Heterojunction bipolar transistor
Broader term	Bipolartransistor Heterostruktur-Bauelement
Topic	Elektronik, Nachrichtentechnik
Source	Lex. Elektronik Mikroelektronik
Record type	Allgemeinbegriff
GND-Identifier	4254091-4
Record ID	042540917
Topic of show all Characterization, Analysis, and Modeling of Dynamic Radio-Frequency Large-Signal Operating Limits, and Long-Term Reliability and Degradation of Silicon-Germanium Heterojunction Bipolar Transistors Characterization, Analysis, and Modeling of Dynamic Radio-Frequency Large-Signal Operating Limits, and Long-Term Reliability and Degradation of Silicon-Germanium Heterojunction Bipolar Transistors Development of InP DHBT for mm-wave applications Characterization and compact modeling of silicon-germanium heterojunction bipolar transistors from room to cryogenic temperatures Characterization and Compact Modeling of Silicon-Germanium Heterojunction Bipolar Transistors from Room to Cryogenic Temperatures InP DHBT based integrated circuits beyond 100 GHz bandwidth combining high power and low noise Physics-Based Technology Computer-Aided Design and Compact Modeling with Special Emphasis on Advanced Indium-Phosphide Heterojunction Bipolar Transistors Microscopic simulation of SiGe HBTs with additional mechanical stress Interconnection development for InP-HBT terahertz circuits High-frequency benchmark circuits for compact model verification with special emphasis on evaluating the impact of physical effects on circuit performance Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies Signal generation for millimeter wave and THZ applications in InP-DHBT and InP-on-BiCMOS technologies Towards multi-dimensional terahertz imaging systems based on low-cost silicon technologies Towards Multi-Dimensional Terahertz Imaging Systems Based on Low-Cost Silicon Technologies Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors Frequency agile power amplifiers based on ferroelectric thin-film varactors Zum thermischen Widerstand von Silicium-Germanium-Hetero-Bipolartransistoren Zum thermischen Widerstand von Silicium-Germanium-Hetero-Bipolartransistoren A fully integrated phase locked loop at 61.44 GHz for high-speed wireless LANs Integrated active sensors for electromagnetic near-field measurement Integrated Active Sensors for Electromagnetic Near-Field Measurement SiGe HBT ICs with high operational to transit frequency ratio: design and design re-use High-speed InP heterojunction bipolar transistors and integrated circuits in transferred substrate technology High-speed InP heterojunction bipolar transistors and integrated circuits in transferred substrate technology Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits Zuverlässigkeitsuntersuchung von GaAs Heteroübergang-Bipolartransistoren Zuverlässigkeitsuntersuchung von GaAs Heteroübergang-Bipolartransistoren Entwicklung von GaAs-basierten Heterostruktur-Bipolartransistoren (HBTs) für Mikrowellen-Leistungszellen Si-SiGe HBT ICs for impulse ultra wideband (I-UWB) communications and sensing SiGe HBT ICs with high operational to transit frequency ratio : design and design re-use 24 GHz multi-functional MMICs using SiGe HBTs Design and vectorial fourport characterisation of differential 40Gbit/s modulator drivers in Si-SiGe HBT technology Design von schnellen Heterostruktur-Bipolar-Transistoren für den Einsatz in Schaltungen mit Resonanz-Tunnel-Dioden Modellierung des Avalancheeffekts in InAIAs, InGaAs-Heterobipolar-Transistoren : physikalische Modellbildung auf der Grundlage von Material- und Geometrieparametern Modellierung des Avalancheeffekts in InAlAs/InGaAs-Heterobipolar-Transistoren : Physikalische Modellbildung auf der Grundlage von Material- und Geometrieparametern Entwicklung von GaAs-basierten Heterostruktur-Bipolartransistoren (HBTs) für Mikrowellen-Leistungszellen Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors Der TEAT: ein neuartiges multifunktionales optoelektronisches Bauelement Der TEAT: Ein neuartiges multifunktionales optoelektronisches Bauelement InP DHBT-based clock and data recovery circuits for ultra-high-speed optical data links InP DHBT-based clock and data recovery circuits for ultra-high-speed optical data links Physical InP-based HBT models for ultimate digital circuit optimization An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits Zuverlässigkeitsstudien an Höchstfrequenzbauelementen mit gepulsten Techniken (TLP-Methode) Monolithische GaAs FET- und HBT-Oszillatoren mit verbesserter Transistormodellierung Monolithische GaAs FET- und HBT-Oszillatoren mit verbesserter Transistormodellierung Monolithische GaAs FET- und HBT-Oszillatoren mit verbesserter Transistormodellierung Monolithische Integration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf InP Monolithische Integration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf InP Untersuchung von Kobaltsilizid-Prozessen für die Anwendung an Basis-Kontakten integrierter Si-SiGe-Heterobipolartransistoren Zuverlässigkeitsstudien an Höchstfrequenzbauelementen mit gepulsten Techniken (TLP-Methode) High frequency bipolar transistors : physics, modeling, applications High-Frequency Bipolar Transistors : Physics, Modeling, Applications Niedertemperaturepitaxie zur Herstellung von SiGe/Si-HBTs Niedertemperaturepitaxie zur Herstellung von SiGe/Si-HBTs Phasenrauscharme monolithische Mikrowellenoszillatoren mit SiGe-HBTs Silizium-Germanium-Hetero-Bipolar-Transistoren für die Hochfrequenz : Technologie + Simulation

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Katalog der Deutschen Nationalbibliothek

Heterobipolartransistor

Characterization, Analysis, and Modeling of Dynamic Radio-Frequency Large-Signal Operating Limits, and Long-Term Reliability and Degradation of Silicon-Germanium Heterojunction Bipolar Transistors

Characterization, Analysis, and Modeling of Dynamic Radio-Frequency Large-Signal Operating Limits, and Long-Term Reliability and Degradation of Silicon-Germanium Heterojunction Bipolar Transistors

Development of InP DHBT for mm-wave applications

Characterization and compact modeling of silicon-germanium heterojunction bipolar transistors from room to cryogenic temperatures

Characterization and Compact Modeling of Silicon-Germanium Heterojunction Bipolar Transistors from Room to Cryogenic Temperatures

InP DHBT based integrated circuits beyond 100 GHz bandwidth combining high power and low noise

Physics-Based Technology Computer-Aided Design and Compact Modeling with Special Emphasis on Advanced Indium-Phosphide Heterojunction Bipolar Transistors

Microscopic simulation of SiGe HBTs with additional mechanical stress

Interconnection development for InP-HBT terahertz circuits

High-frequency benchmark circuits for compact model verification with special emphasis on evaluating the impact of physical effects on circuit performance

Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz

Signal generation for millimeter wave and THz applications in InP-DHBT and InP-on-BiCMOS technologies

Signal generation for millimeter wave and THZ applications in InP-DHBT and InP-on-BiCMOS technologies

Towards multi-dimensional terahertz imaging systems based on low-cost silicon technologies

Towards Multi-Dimensional Terahertz Imaging Systems Based on Low-Cost Silicon Technologies

Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Frequency agile power amplifiers based on ferroelectric thin-film varactors

Zum thermischen Widerstand von Silicium-Germanium-Hetero-Bipolartransistoren

Zum thermischen Widerstand von Silicium-Germanium-Hetero-Bipolartransistoren

A fully integrated phase locked loop at 61.44 GHz for high-speed wireless LANs

Integrated active sensors for electromagnetic near-field measurement

Integrated Active Sensors for Electromagnetic Near-Field Measurement

SiGe HBT ICs with high operational to transit frequency ratio: design and design re-use

High-speed InP heterojunction bipolar transistors and integrated circuits in transferred substrate technology

High-speed InP heterojunction bipolar transistors and integrated circuits in transferred substrate technology

Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits

Zuverlässigkeitsuntersuchung von GaAs Heteroübergang-Bipolartransistoren

Zuverlässigkeitsuntersuchung von GaAs Heteroübergang-Bipolartransistoren

Entwicklung von GaAs-basierten Heterostruktur-Bipolartransistoren (HBTs) für Mikrowellen-Leistungszellen

Si-SiGe HBT ICs for impulse ultra wideband (I-UWB) communications and sensing

SiGe HBT ICs with high operational to transit frequency ratio : design and design re-use

24 GHz multi-functional MMICs using SiGe HBTs

Design and vectorial fourport characterisation of differential 40Gbit/s modulator drivers in Si-SiGe HBT technology

Design von schnellen Heterostruktur-Bipolar-Transistoren für den Einsatz in Schaltungen mit Resonanz-Tunnel-Dioden

Modellierung des Avalancheeffekts in InAIAs, InGaAs-Heterobipolar-Transistoren : physikalische Modellbildung auf der Grundlage von Material- und Geometrieparametern

Modellierung des Avalancheeffekts in InAlAs/InGaAs-Heterobipolar-Transistoren : Physikalische Modellbildung auf der Grundlage von Material- und Geometrieparametern

Entwicklung von GaAs-basierten Heterostruktur-Bipolartransistoren (HBTs) für Mikrowellen-Leistungszellen

Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits

Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors

Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors

Der TEAT: ein neuartiges multifunktionales optoelektronisches Bauelement

Der TEAT: Ein neuartiges multifunktionales optoelektronisches Bauelement

InP DHBT-based clock and data recovery circuits for ultra-high-speed optical data links

InP DHBT-based clock and data recovery circuits for ultra-high-speed optical data links

Physical InP-based HBT models for ultimate digital circuit optimization

An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits

Zuverlässigkeitsstudien an Höchstfrequenzbauelementen mit gepulsten Techniken (TLP-Methode)

Monolithische GaAs FET- und HBT-Oszillatoren mit verbesserter Transistormodellierung

Monolithische GaAs FET- und HBT-Oszillatoren mit verbesserter Transistormodellierung

Monolithische GaAs FET- und HBT-Oszillatoren mit verbesserter Transistormodellierung

Monolithische Integration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf InP

Monolithische Integration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf InP

Untersuchung von Kobaltsilizid-Prozessen für die Anwendung an Basis-Kontakten integrierter Si-SiGe-Heterobipolartransistoren

Zuverlässigkeitsstudien an Höchstfrequenzbauelementen mit gepulsten Techniken (TLP-Methode)

High frequency bipolar transistors : physics, modeling, applications

High-Frequency Bipolar Transistors : Physics, Modeling, Applications

Niedertemperaturepitaxie zur Herstellung von SiGe/Si-HBTs

Niedertemperaturepitaxie zur Herstellung von SiGe/Si-HBTs

Phasenrauscharme monolithische Mikrowellenoszillatoren mit SiGe-HBTs

Silizium-Germanium-Hetero-Bipolar-Transistoren für die Hochfrequenz : Technologie + Simulation