Title |
Ternäre und quaternäre Barrierenmaterialien für nitridische Heterostruktur-Feldeffekttransistoren / Taek Lim. Fraunhofer-Institut für Angewandte Festkörperphysik IAF |
|---|---|
Involved |
Taek Lim (Verfasser) |
Published |
Stuttgart: Fraunhofer-Verl. |
Extent |
157 S. : Ill., graph. Darst. |
Thesis |
Zugl.: Freiburg (Breisgau), Univ., Diss., 2011 |
ISBN |
978-3-8396-0292-8 |
Language |
|
Country |
|
Topic |
|
Subject |
Feldeffekttransistor, Heterostruktur-Bauelement, Galliumnitrid, Sperrschicht, Molekularstrahlepitaxie, Gitterbaufehler, Leistungstransistor |
DDC notation |
|
Series |
Science for systems ; Bd. 4 |
Record ID |
1014283345 |
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