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Sebastian Gutsch

Ingenieur

Name	Sebastian Gutsch
Place	Deutschland
Academic degree	Dr. rer. nat. Dipl.-Ing.
Profession	Ingenieur (characteristic profession)
Related	Elektrotechnik (Thema) Halbleitertechnologie (Thema) Werkstoffkunde (Thema) Nanotechnologie (Thema)
Further information	Diss. 2014, Universität Freiburg, Technische Fakultät
Record type	Person
GND-Identifier	1048733823
Record ID	1048733823
Involved in show all Two-step electrochemical Au nanoparticle formation in polyaniline Size Effect in SnO 2/Al 2 O 3 Core/Shell Nanowires after Battery Cycling Effects of field enhanced charge transfer on the luminescence properties of Si/SiO2 superlattices Size effect in SnO2/Al2O3 core/shell nanowires after battery cycling Low-power wavelength modulation in size-controlled Si nanocrystals using quantum confined Stark effect Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices Electron beam effects on oxide thin films - structure and electrical property correlations Influence of Al2O3 nanoparticles on the mechanical properties of a UV cured polyacrylate for 3D Inkjet printing Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect Sphericity and roundness computation for particles using the extreme vertices model Effect of Si 3 N 4 ‐Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride Atom probe tomography of size‐controlled phosphorus doped silicon nanocrystals Determination of Shape and Sphericity of Silicon Quantum Dots Imaged by EFTEM‐Tomography Boron-incorporating silicon nanocrystals embedded in SiO2: absence of free carriers vs. B-induced defects Defect-induced luminescence quenching vs. charge carrier generation of phosphorus incorporated in silicon nanocrystals as function of size Modulation doping of silicon using aluminium-induced acceptor states in silicon dioxide Erratum to: Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide — ERRATUM Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide Structural parameters effect on the electrical and electroluminescence properties of silicon nanocrystals/SiO2 superlattices Electronic transport in ordered silicon nanocrystal networks = Elektronischer Transport in geordneten Silizium-Nanokristall Netzwerken Silicon nanocrystals from high‐temperature annealing: Characterization on device level

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Sebastian Gutsch

Two-step electrochemical Au nanoparticle formation in polyaniline

Size Effect in SnO 2/Al 2 O 3 Core/Shell Nanowires after Battery Cycling

Effects of field enhanced charge transfer on the luminescence properties of Si/SiO2 superlattices

Size effect in SnO2/Al2O3 core/shell nanowires after battery cycling

Low-power wavelength modulation in size-controlled Si nanocrystals using quantum confined Stark effect

Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices

Electron beam effects on oxide thin films - structure and electrical property correlations

Influence of Al2O3 nanoparticles on the mechanical properties of a UV cured polyacrylate for 3D Inkjet printing

Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect

Sphericity and roundness computation for particles using the extreme vertices model

Effect of Si 3 N 4 ‐Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Atom probe tomography of size‐controlled phosphorus doped silicon nanocrystals

Determination of Shape and Sphericity of Silicon Quantum Dots Imaged by EFTEM‐Tomography

Boron-incorporating silicon nanocrystals embedded in SiO2: absence of free carriers vs. B-induced defects

Defect-induced luminescence quenching vs. charge carrier generation of phosphorus incorporated in silicon nanocrystals as function of size

Modulation doping of silicon using aluminium-induced acceptor states in silicon dioxide

Erratum to: Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide — ERRATUM

Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide

Structural parameters effect on the electrical and electroluminescence properties of silicon nanocrystals/SiO2 superlattices

Electronic transport in ordered silicon nanocrystal networks = Elektronischer Transport in geordneten Silizium-Nanokristall Netzwerken

Silicon nanocrystals from high‐temperature annealing: Characterization on device level