Detail page

Knowledge Web

Person

Andreas N. Danilewsky

Mineraloge

Name	Andreas N. Danilewsky
Place	Freiburg im Breisgau (Wirkungsort) Deutschland
Academic degree	PD Dr. habil.
Profession	Mineraloge (characteristic profession)
Related	Albert-Ludwigs-Universität Freiburg. Kristallographisches Institut (1990-) Kristallographie (Thema) Werkstoffkunde (Thema)
Record type	Person
GND-Identifier	1124843558
Record ID	1124843558
Involved in show all Automated analysis of X-ray topography of 4H-SiC wafers : : image analysis, numerical computations, and artificial intelligence approaches for locating and characterizing screw dislocations 3D investigation of dislocation development in semiconductor wafers by means of x-ray diffraction imaging Applicability of a flat-bed birefringence setup for the determination of threading dislocations of silicon carbide wafers Large-scale defect clusters with hexagonal honeycomb-like arrangement in ammonothermal GaN crystals Review of sublimation growth of SiC bulk crystals X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions Analysis of c-lattice parameters to evaluate Na2O loss from and Na2O content in β''-alumina ceramics X-ray imaging of silicon die within fully packaged semiconductor devices Vacancy Clustering in Dislocation-Free High-Purity Germanium X‐Ray Topography—More than Nice Pictures Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals Global defect distribution and their influence on the local real structure of 4H-SiC X-Ray topography-more than nice pictures Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages Quantitative imaging of the stress/strain fields and generation of macroscopic cracks from indents in silicon Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage The behaviour of silicon and α-quartz under non-hydrostatic dynamic conditions Synchrotron white-beam X-ray topography analysis of the defect structure of HVPE-GaN substrates The geometry of catastrophic fracture during high temperature processing of silicon

Please note

The beta version does not yet contain all functions and information of the DNB portal catalogue. If you are missing information or want to order a medium, please visit the page in the DNB portal catalogue via the following link:

Katalog der Deutschen Nationalbibliothek

Andreas N. Danilewsky

Automated analysis of X-ray topography of 4H-SiC wafers : : image analysis, numerical computations, and artificial intelligence approaches for locating and characterizing screw dislocations

3D investigation of dislocation development in semiconductor wafers by means of x-ray diffraction imaging

Applicability of a flat-bed birefringence setup for the determination of threading dislocations of silicon carbide wafers

Large-scale defect clusters with hexagonal honeycomb-like arrangement in ammonothermal GaN crystals

Review of sublimation growth of SiC bulk crystals

X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions

Analysis of c-lattice parameters to evaluate Na2O loss from and Na2O content in β''-alumina ceramics

X-ray imaging of silicon die within fully packaged semiconductor devices

Vacancy Clustering in Dislocation-Free High-Purity Germanium

X‐Ray Topography—More than Nice Pictures

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals

Global defect distribution and their influence on the local real structure of 4H-SiC

X-Ray topography-more than nice pictures

Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC

Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages

Quantitative imaging of the stress/strain fields and generation of macroscopic cracks from indents in silicon

Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage

The behaviour of silicon and α-quartz under non-hydrostatic dynamic conditions

Synchrotron white-beam X-ray topography analysis of the defect structure of HVPE-GaN substrates

The geometry of catastrophic fracture during high temperature processing of silicon