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A. S. Puzanov, S. V. Obolenskiy, Vladimir Aleksandrovič Kozlov et al.

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

Published in: Semiconductors : an English translation of the journal, Fizika i Tekhnika Poluprovodnikov 50, 12, 3.2.2017, date:12.2016

Title

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

Involved 

A. S. Puzanov (Verfasser)
S. V. Obolenskiy (Sonstige)
Vladimir Aleksandrovič Kozlov (Sonstige)
SpringerLink (Online service) (Sonstige)

Published in

Semiconductors : an English translation of the journal, Fizika i Tekhnika Poluprovodnikov 50, 12, 3.2.2017, date:12.2016, Seite 1678-1683

Published

2016

Language

Englisch

Country

Deutschland

Topic

Physik

Subject

Physics.
Magnetism, Magnetic Materials.
Physics, general.

Persistent identifier

urn:nbn:de:1111-201702263861 (URN)
10.1134/S1063782616120162 (DOI)

Record ID

1126379727
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