Title |
GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / Peng Luo ; Gutachter: Matthias Rudolph |
|---|---|
Involved |
Peng Luo (Verfasser) |
Published |
Cottbus: BTU Cottbus - Senftenberg |
Extent |
Online-Ressource |
Thesis |
Dissertation, Cottbus, BTU Cottbus - Senftenberg, 2018 |
Language |
|
Country |
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Topic |
|
Subject |
HEMT, Galliumnitrid, Haftstelle, Tiefe Störstelle, Drain (Elektronik), Großsignalverhalten, Source (Elektronik), Streumatrix (Elektrotechnik) |
DDC notation |
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Persistent identifier |
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Record ID |
1168633826 |
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