Title |
Alloy Stability of Ge1−x Sn x with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy |
|---|---|
Involved |
Daniel Schwarz (Verfasser) |
Published in |
Journal of electronic materials : JEM ; a publication of the Minerals, Metals & Materials Society (TMS) and the Institute of Electrical and Electronics Engineers (IEEE) 14.5.2020, Seite 1-7 |
Published |
2020 |
Language |
|
Country |
|
Topic |
|
Subject |
Optical and Electronic Materials. |
DDC notation |
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Persistent identifier |
urn:nbn:de:101:1-2020071819314835424117 (URN) |
Record ID |
1214101038 |
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