Title |
MOCVD Growth of Ga(Al)N/InGaN/Ga(Al)N-Heterostructures: Influence of the Buffer Layer Al-Concentration and Growth Duration on the In-Incorporation in InGaN |
|---|---|
Involved |
Marco Schowalter (Verfasser)
Brigitte Neubauer (Verfasser) Andreas Rosenauer (Verfasser) Dagmar Gerthsen (Verfasser)
Oliver Schön (Verfasser)
Michael Heuken (Verfasser) SpringerLink (Online service) (Sonstige) |
Published in |
MRS online proceedings library 680, 1, 21.3.2011, date:12.2001, Seite 1-6 |
Published |
2001 |
Language |
|
Country |
|
Topic |
|
Subject |
Materials Science, general.
Characterization and Evaluation of Materials. Nanotechnology. Inorganic Chemistry.
Materials Engineering.
Applied and Technical Physics. |
DDC notation |
|
Persistent identifier |
urn:nbn:de:101:1-2021012021090677281793 (URN) |
Record ID |
1225467675 |
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