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Armin Dadgar

Physiker

Name	Armin Dadgar
Place	Deutschland
Gender	männlich
Academic degree	Prof. Dr.
Profession	Physiker
Related	Otto-von-Guericke-Universität Magdeburg. Institut für Physik Physik (Studienfach)
Record type	Person
GND-Identifier	1236022688
Record ID	1236022688
Involved in show all GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources Nanomechanical Crystalline AlN Resonators with High Quality Factors for Quantum Optoelectromechanics Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction Sputter Epitaxy of AlN and GaN on Si (111) Desorption induced formation of low-density GaN quantum dots : nanoscale correlation of structural and optical properties Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies Reliable GaN-based THz gunn diodes with side-contact and field-plate technologies Impact of AlN/Si Nucleation Layers Grown Either by NH 3 ‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs Influence of a TESb flush on InAs/GaAs submonolayer stacks Novel high-power and high-brightness semiconductor lasers with ultra-narrow vertical beam divergence Properties of C‐doped GaN Polarization engineering of c ‐plane InGaN quantum wells by pulsed‐flow growth of AlInGaN barriers Nanoscale cathodoluminescence of stacking faults and partial dislocations in a ‐plane GaN Wafer curvature, temperature inhomogeneity, plastic deformation and their impact on the properties of GaN on silicon power and opto‐electronic structures Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities Growth and stacking fault reduction in semi‐polar GaN films on planar Si (112) and Si (113) Characterization of AlGaInN layers using X‐ray diffraction and fluorescence Heavy Si doping: The key in heteroepitaxial growth of a‐plane GaN without basal plane stacking faults? Micro‐structural anisotropy of a‐plane GaN analyzed by high resolution X‐ray diffraction AlInN/GaN based multi quantum well structures – growth and optical properties MOVPE Growth and Characterization of AlInN FET Structures on Si(111) Laser‐Interference Lithography Tailored for Highly Symmetrically Arranged ZnO Nanowire Arrays †

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Armin Dadgar

GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources

Nanomechanical Crystalline AlN Resonators with High Quality Factors for Quantum Optoelectromechanics

Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction

Sputter Epitaxy of AlN and GaN on Si (111)

Desorption induced formation of low-density GaN quantum dots : nanoscale correlation of structural and optical properties

Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications

Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

Reliable GaN-based THz gunn diodes with side-contact and field-plate technologies

Impact of AlN/Si Nucleation Layers Grown Either by NH 3 ‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs

Influence of a TESb flush on InAs/GaAs submonolayer stacks

Novel high-power and high-brightness semiconductor lasers with ultra-narrow vertical beam divergence

Properties of C‐doped GaN

Polarization engineering of c ‐plane InGaN quantum wells by pulsed‐flow growth of AlInGaN barriers

Nanoscale cathodoluminescence of stacking faults and partial dislocations in a ‐plane GaN

Wafer curvature, temperature inhomogeneity, plastic deformation and their impact on the properties of GaN on silicon power and opto‐electronic structures

Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities

Growth and stacking fault reduction in semi‐polar GaN films on planar Si (112) and Si (113)

Characterization of AlGaInN layers using X‐ray diffraction and fluorescence

Heavy Si doping: The key in heteroepitaxial growth of a‐plane GaN without basal plane stacking faults?

Micro‐structural anisotropy of a‐plane GaN analyzed by high resolution X‐ray diffraction

AlInN/GaN based multi quantum well structures – growth and optical properties

MOVPE Growth and Characterization of AlInN FET Structures on Si(111)

Laser‐Interference Lithography Tailored for Highly Symmetrically Arranged ZnO Nanowire Arrays †