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Philipp Döring

Name	Philipp Döring
Place	Deutschland
Gender	männlich
Variant	Philipp Maximilian Döring (vollständiger Name) P. Döring
Related	Leistungselektronik (Studienfach)
Further information	Dissertation 2021, Albert-Ludwigs-Universität Freiburg im Breisgau, Technische Fakultät
Source	FreiDok plus
Record type	Person
GND-Identifier	1237139570
Record ID	1237139570
Involved in show all Electrical properties of SiNy/Al1−xScxN/GaN-based metal–insulator–semiconductor structures Higher order thermal impedance extraction of GaN power HEMTs by I-V measurements Thermal characterization of GaN Power HEMTs by transient I – V curves, infrared microscopy, and thermal simulation Theoretical limits of the matching bandwidth and output power of AlScN-based HEMTs Advances in GaN devices and circuits at higher mm-wave frequencies GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI Voltage-margin limiting mechanisms of AlScN-based HEMTs Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures Building blocks for GaN power integration Experimental evaluation of the device design and process technology of the current aperture vertical electron transistor for power electronics applications Growth and fabrication of quasivertical current aperture vertical electron transistor structures Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability Technology of GaN-based large area CAVETs with co-integrated HEMTs Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures Optimization of metal‐organic chemical vapor deposition regrown n‐GaN

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Philipp Döring

Electrical properties of SiNy/Al1−xScxN/GaN-based metal–insulator–semiconductor structures

Higher order thermal impedance extraction of GaN power HEMTs by I-V measurements

Thermal characterization of GaN Power HEMTs by transient I – V curves, infrared microscopy, and thermal simulation

Theoretical limits of the matching bandwidth and output power of AlScN-based HEMTs

Advances in GaN devices and circuits at higher mm-wave frequencies

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

Voltage-margin limiting mechanisms of AlScN-based HEMTs

Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures

On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors

Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures

Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Building blocks for GaN power integration

Experimental evaluation of the device design and process technology of the current aperture vertical electron transistor for power electronics applications

Growth and fabrication of quasivertical current aperture vertical electron transistor structures

Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability

Technology of GaN-based large area CAVETs with co-integrated HEMTs

Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN

Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures

Optimization of metal‐organic chemical vapor deposition regrown n‐GaN