Title |
Plasma‐Enhanced Atomic Layer Deposition of Al 2 O 3 on Graphene Using Monolayer hBN as Interfacial Layer |
|---|---|
Involved |
Bárbara Canto (Verfasser)
Martin Otto (Verfasser) Michael J. Powell (Verfasser) Vitaliy Babenko (Verfasser)
Aileen O'Mahony (Verfasser)
Harm Knoops (Verfasser) Ravi S. Sundaram (Verfasser) Stephan Hofmann (Verfasser) Max Christian Lemme (Verfasser) Daniel Neumaier (Verfasser) |
Published in |
Advanced Materials Technologies 26.07.2021 |
Published |
26.07.2021 |
Language |
|
Country |
|
Subject |
Al 2O 3 thin film
ALD breakdown field double‐gate‐transistors
GFET
graphene hexagonal boron nitride |
Persistent identifier |
urn:nbn:de:101:1-2021072615085660765739 (URN) |
Record ID |
1237662575 |
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