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Alexander Zintler

Name	Alexander Zintler
Place	Darmstadt (Wirkungsort) Deutschland
Gender	männlich
Academic degree	Dr. rer. nat. (Fachbereich Material- und Geowissenschaften der Technischen Universität Darmstadt) (2022) M. sc.
Related	Technische Universität Darmstadt. Materialwissenschaft (Promotion)
Source	https://www.mawi.tu-darmstadt.de/aem/fachgebiet_aem/team_aem/kontakte_aem_detail_96832.de.jsp (Stand: 07.09.2021)
Record type	Person
GND-Identifier	1240713312
Record ID	1240713312
Involved in show all Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices Operando two-terminal devices inside a transmission electron microscope Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties Ferromagnetic Mn–Al–C L1 0 Formation by Electric Current Assisted Annealing Controlling the Formation of Conductive Pathways in Memristive Devices Ferromagnetic Mn–Al–C L1₀ Formation by Electric Current Assisted Annealing Controlling the Formation of Conductive Pathways in Memristive Devices Enhanced Conductivity and Microstructure in Highly Textured TiN1–x/c-Al2O3 Thin Films Investigating the influence of microstructure and grain boundaries on electric properties in thin film oxide RRAM devices – A component specific approach Piezoelectricity and rotostriction through polar and non-polar coupled instabilities in bismuth-based piezoceramics Gradual reset and set characteristics in yttrium oxide based resistive random access memory Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

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Alexander Zintler

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Operando two-terminal devices inside a transmission electron microscope

Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties

Ferromagnetic Mn–Al–C L1 0 Formation by Electric Current Assisted Annealing

Controlling the Formation of Conductive Pathways in Memristive Devices

Ferromagnetic Mn–Al–C L1₀ Formation by Electric Current Assisted Annealing

Controlling the Formation of Conductive Pathways in Memristive Devices

Enhanced Conductivity and Microstructure in Highly Textured TiN1–x/c-Al2O3 Thin Films

Investigating the influence of microstructure and grain boundaries on electric properties in thin film oxide RRAM devices – A component specific approach

Piezoelectricity and rotostriction through polar and non-polar coupled instabilities in bismuth-based piezoceramics

Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices