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Wael Jatal, Uwe Baumann, Heiko O. Jacobs et al.

Enhancement‐ and depletion‐mode AlGaN/GaN HEMTs on 3C‐SiC (111)/Si (111) pseudosubstrates

Published in: Physica status solidi. A, Applications and materials science 214, 4, 2017

Title

Enhancement‐ and depletion‐mode AlGaN/GaN HEMTs on 3C‐SiC (111)/Si (111) pseudosubstrates

Involved 

Wael Jatal (Verfasser)
Uwe Baumann (Verfasser)
Heiko O. Jacobs (Verfasser)
Frank Schwierz (Verfasser)
Jörg Pezoldt (Verfasser)

Published in

Physica status solidi. A, Applications and materials science 214, 4, 2017

Published

24.02.2017

Language

Englisch

Country

Deutschland

Subject
3C‐SiC
AlGaN
chemical vapor deposition
high electron mobility transistors
silicon
substrates

Persistent identifier

urn:nbn:de:101:1-2022100408293553143500 (URN)
10.1002/pssa.201600415 (DOI)

Record ID

1269412981
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