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Wael Jatal, Ingo Hörselmann, Heiko O. Jacobs et al.

AlGaN HEMT based digital circuits on 3C‐SiC (111)/Si (111) pseudosubstrates

Published in: Physica status solidi. A, Applications and materials science 214, 4, 2017

Title

AlGaN HEMT based digital circuits on 3C‐SiC (111)/Si (111) pseudosubstrates

Involved 

Wael Jatal (Verfasser)
Ingo Hörselmann (Verfasser)
Heiko O. Jacobs (Verfasser)
Frank Schwierz (Verfasser)
Jörg Pezoldt (Verfasser)

Published in

Physica status solidi. A, Applications and materials science 214, 4, 2017

Published

07.02.2017

Language

Englisch

Country

Deutschland

Subject
3C‐SiC
AlGaN
chemical vapour deposition
digital circuits
GaN
high electron mobility transistors
silicon

Persistent identifier

urn:nbn:de:101:1-2022100408330768248910 (URN)
10.1002/pssa.201600416 (DOI)

Record ID

1269413341
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