Title |
A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN |
|---|---|
Involved |
Lukas Peters (Verfasser) |
Published in |
Physica status solidi. A, Applications and materials science 03.11.2022 |
Published |
03.11.2022 |
Language |
|
Country |
|
Subject |
absorption
AlN carbon high-temperature annealing
ion implantation
point defects transmittance |
Persistent identifier |
urn:nbn:de:101:1-2022110414163674952750 (URN) |
Record ID |
1272011836 |
Please note
The beta version does not yet contain all functions and information of the DNB portal catalogue. If you are missing information or want to order a medium, please visit the page in the DNB portal catalogue via the following link: