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Roghaiyeh Ravash, Peter Veit, Mathias Müller et al.

Growth and stacking fault reduction in semi‐polar GaN films on planar Si (112) and Si (113)

Published in: Physica status solidi : pss. C, Current topics in solid state physics 9, 3‐4, 2012

Title

Growth and stacking fault reduction in semi‐polar GaN films on planar Si (112) and Si (113)

Involved 
Roghaiyeh Ravash (Verfasser)
Peter Veit (Verfasser)
Mathias Müller (Verfasser)
Gordon Schmidt (Verfasser)
Anja Dempewolf (Verfasser)
Thomas Hempel (Verfasser)
Jürgen Bläsing (Verfasser)
Frank Bertram (Verfasser)
Armin Dadgar (Verfasser)
Jürgen Christen (Verfasser)
Alois Krost (Verfasser)

Published in

Physica status solidi : pss. C, Current topics in solid state physics 9, 3‐4, 2012, Seite 507-510

Published

26.01.2012

Language

Englisch

Country

Deutschland

Subject

MOVPE
semi‐polar GaN
silicon substrate
basal plane stacking faults (BSFs)

Persistent identifier

urn:nbn:de:101:1-2023022007341379661109 (URN)
10.1002/pssc.201100532 (DOI)

Record ID

1281431354
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