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Patrick Schygulla

Physiker

Name	Patrick Schygulla
Place	Deutschland
Gender	männlich
Academic degree	Dr. rer. nat. (Univ. Freiburg (Breisgau)) (2023)
Profession	Physiker (characteristic profession)
Further information	Diss. 2023, Universität Freiburg (Breisgau), Technische Fakultät, Fraunhofer-Inst. für Solare Energiesysteme
Source	FreiDok plus
Record type	Person
GND-Identifier	1282589547
Record ID	1282589547
Involved in show all Sheet Resistance Optimization in (Al) GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells III-V-semiconductor subcell absorbers in silicon-based triple-junction solar cells Recent progress in monolithic two-terminal perovskite-based triple-junction solar cells Sheet resistance optimization in (AI)GaInP solar cells for concentrator quadruple–junction solar cells III-V-semiconductor subcell absorbers in silicon-based triple-junction solar cells Revealing fundamentals of charge extraction in photovoltaic devices through potentiostatic photoluminescence imaging Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g Middle cell development for wafer-bonded III-V//Si tandem solar cells Determination of the complex refractive index of compound semiconductor alloys for optical device modelling Two‐terminal direct wafer‐bonded GaInP/AlGaAs//Si triple‐junction solar cell with AM1.5g efficiency of 34.1%

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Patrick Schygulla

Sheet Resistance Optimization in (Al) GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells

III-V-semiconductor subcell absorbers in silicon-based triple-junction solar cells

Recent progress in monolithic two-terminal perovskite-based triple-junction solar cells

Sheet resistance optimization in (AI)GaInP solar cells for concentrator quadruple–junction solar cells

III-V-semiconductor subcell absorbers in silicon-based triple-junction solar cells

Revealing fundamentals of charge extraction in photovoltaic devices through potentiostatic photoluminescence imaging

Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g

Middle cell development for wafer-bonded III-V//Si tandem solar cells

Determination of the complex refractive index of compound semiconductor alloys for optical device modelling

Two‐terminal direct wafer‐bonded GaInP/AlGaAs//Si triple‐junction solar cell with AM1.5g efficiency of 34.1%