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Lutz Kirste, Taek Lim, Rolf Aidam et al.

Structural properties of MBE AlInN and AlGaInN barrier layers for GaN‐HEMT structures

Published in: Physica status solidi. A, Applications and materials science 207, 6, 2010

Title

Structural properties of MBE AlInN and AlGaInN barrier layers for GaN‐HEMT structures

Involved 
Lutz Kirste (Verfasser)
Taek Lim (Verfasser)
Rolf Aidam (Verfasser)
Stefan Müller (Verfasser)
Patrick Waltereit (Verfasser)
Oliver Ambacher (Verfasser)

Published in

Physica status solidi. A, Applications and materials science 207, 6, 2010, Seite 1338-1341

Published

17.05.2010

Language

Englisch

Country

Deutschland

Subject
III–V heterostructures
high‐mobility
interface formation
MBE
structure
transistors

Persistent identifier

urn:nbn:de:101:1-2023041906373272029660 (URN)
10.1002/pssa.200983501 (DOI)

Record ID

1286589762
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