Title |
Determination of the valence band offsets at HfO 2/InN (0001) and InN/In 0.3 Ga 0.7 N (0001) heterojunctions using X‐ray photoelectron spectroscopy |
|---|---|
Involved |
Anja Eisenhardt (Verfasser)
Andreas Knübel (Verfasser) Ralf Schmidt (Verfasser) Marcel Himmerlich (Verfasser) |
Published in |
Physica status solidi. A, Applications and materials science 207, 6, 2010, Seite 1335-1337 |
Published |
17.05.2010 |
Language |
|
Country |
|
Subject |
III–V nitride heterojunction |
Persistent identifier |
urn:nbn:de:101:1-2023041906581045633972 (URN) |
Record ID |
1286591287 |
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