Title |
A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN / Lukas Peters, Christoph Margenfeld, Jan Krügener, Carsten Ronning, Andreas Waag |
|---|---|
Involved |
Lukas Peters (Verfasser) |
Published |
Hannover: Gottfried Wilhelm Leibniz Universität Hannover |
Extent |
Online-Ressource |
Language |
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Country |
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Topic |
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Subject |
absorption
AlN carbon high-temperature annealing
ion implantation
point defects transmittance |
DDC notation |
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Persistent identifier |
urn:nbn:de:101:1-2023052502151100502081 (URN) |
Further information |
In: Peters, L.; Margenfeld, C.; Krügener, J.; Ronning, C.; Waag, A.: A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN. In: Physica status solidi : A, Applied research (2022), online first, 2200485. DOI: https://doi.org/10.1002/pssa.202200485 |
Record ID |
1290548307 |
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