Title |
Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates |
|---|---|
Involved |
Marko J. Tadjer (Verfasser)
Patrick Waltereit (Verfasser) Lutz Kirste (Verfasser) Stefan Müller (Verfasser)
James Spencer Lundh (Verfasser)
Alan G. Jacobs (Verfasser) Andrew D. Koehler (Verfasser) Pavel Komarov (Verfasser) Peter Raad (Verfasser) John Gaskins (Verfasser) Patrick Hopkins (Verfasser) Vlad Odnoblyudov (Verfasser) Cem Basceri (Verfasser) Travis J. Anderson (Verfasser) Karl D. Hobart (Verfasser) |
Published in |
Physica status solidi. A, Applications and materials science 01.06.2023 |
Published |
01.06.2023 |
Language |
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Country |
|
Subject |
engineered substrate |
Persistent identifier |
urn:nbn:de:101:1-2023060215105098113787 (URN) |
Record ID |
1291679006 |
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