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Jürgen A. Schäfer (1944-)

Physiker

Name	Jürgen A. Schäfer
Time	1944- (Date of birth and death)
Place	Völklingen (Geburtsort) Kassel (Wirkungsort) Ilmenau (1994-2009) (Wirkungsort) Deutschland
Gender	männlich
Academic degree	Univ.-Prof., Dr. rer. nat. habil.
Profession	Physiker (characteristic profession)
Variant	Jürgen Alois Schäfer Jürgen Schäfer Jürgen A. Schaefer
Related	Technische Universität Ilmenau Mathematik; Physik (Studienfach)
Record type	Person
GND-Identifier	130286281
Record ID	130286281
Involved in show all Degradation Mechanisms of Solid Oxide Fuel Cell Cathodes Friction and Wear Properties of WC/C Nano-Scale Multilayer Coatings on Technical Surfaces Oberflächenanalytische Untersuchungen an kohlenstoffbasierten Materialien Growth of large-area single- and Bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy Determination of the valence band offsets at HfO 2/InN (0001) and InN/In 0.3 Ga 0.7 N (0001) heterojunctions using X‐ray photoelectron spectroscopy Influence of hydrogen on nanocrystalline diamond surfaces investigated with HREELS and XPS Ionenimplantierte Titanoberflächen für den Hartgewebeersatz Electronic properties of organic semiconductor blends: ambipolar mixtures of phthalocyanine and fullerene Microtribological properties of silicon and silicon coated with self-assembled monolayers: effect of applied load and sliding velocity

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Jürgen A. Schäfer (1944-)

Degradation Mechanisms of Solid Oxide Fuel Cell Cathodes

Friction and Wear Properties of WC/C Nano-Scale Multilayer Coatings on Technical Surfaces

Oberflächenanalytische Untersuchungen an kohlenstoffbasierten Materialien

Growth of large-area single- and Bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces

Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy

Determination of the valence band offsets at HfO 2/InN (0001) and InN/In 0.3 Ga 0.7 N (0001) heterojunctions using X‐ray photoelectron spectroscopy

Influence of hydrogen on nanocrystalline diamond surfaces investigated with HREELS and XPS

Ionenimplantierte Titanoberflächen für den Hartgewebeersatz

Electronic properties of organic semiconductor blends: ambipolar mixtures of phthalocyanine and fullerene

Microtribological properties of silicon and silicon coated with self-assembled monolayers: effect of applied load and sliding velocity