Title |
Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3 |
|---|---|
Involved |
Jian Yang (Verfasser)
Haolin Ye (Verfasser) Xiangzhao Zhang (Verfasser) Xin Miao (Verfasser)
Xiubo Yang (Verfasser)
Lin Xie (Verfasser) Zhongqi Shi (Verfasser) Shaoping Chen (Verfasser) Chongjian Zhou (Verfasser) Guanjun Qiao (Verfasser) Matthias Wuttig (Verfasser) Li Wang (Verfasser) Guiwu Liu (Verfasser) Yuan Yu (Verfasser) |
Published in |
Advanced functional materials 04.12.2023 |
Published |
04.12.2023 |
Language |
|
Country |
|
Subject |
bismuth sulfide |
Persistent identifier |
urn:nbn:de:101:1-2023120414552714234291 (URN) |
Record ID |
1312106476 |
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