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Ingmar Kallfass (1973-)

Name	Ingmar Kallfass
Time	1973- (Date of birth and death)
Place	Deutschland
Gender	männlich
Academic degree	Prof. Dr.-Ing.
Variant	I. Kallfass
Related	Universität Stuttgart. Institut für Robuste Leistungshalbleitersysteme Elektrotechnik (Studienfach)
Further information	Dissertation Ulm 2005, Fakultät für Ingenieurwissenschaften
Record type	Person
GND-Identifier	131889028
Record ID	131889028
Involved in show all Implementation and characterization of a W-band SatCom ground terminal receiver with 5 GHz reception bandwidth and mechanical beam steering Compact modeling of modern power MOSFETs based on industry-standard CMOS models Fully Integrated Ultra-Wideband Receiver and Transmitter Front-Ends for Frequency Modulated Continuous Wave Multiple Input Multiple Output Imaging Radars Implementation and characterization of a W-band SatCom ground terminal receiver with 5 GHz reception bandwidth and mechanical beam steering Efficient joint broadband radar and communication for airborne SAR imaging with small platforms Power semiconductor loss characterization and advanced thermal management for high power density AC/DC battery chargers Entwicklung einer Methodik zur Bestimmung der Schaltverluste von diskreten 400V-GaN-Halbbrücken A comparison of system architectures for wireless links in the terahertz band Design of frequency-converting monolithic integrated circuits for millimeter-wave applications Novel characterization techniques for the study of the dynamic behavior of silicon carbide power MOSFETs Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors Switching characteristics of integrated GaN-on-Si half-bridge and driver circuits Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer MMICs and Mixed-Signal ICs Based on III/V Technology for Highest Frequencies and Data Rates A unified approach to charge-conservative capacitance modelling in HEMTs Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors Compehensive Nonlinear Modelling of Dispersive Heterstructure Field Effect Transistors and their MMIC Applications Comprehensive nonlinear modelling of dispersive Heterostructure field effect transistors and their MMIC applications

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Katalog der Deutschen Nationalbibliothek

Ingmar Kallfass (1973-)

Implementation and characterization of a W-band SatCom ground terminal receiver with 5 GHz reception bandwidth and mechanical beam steering

Compact modeling of modern power MOSFETs based on industry-standard CMOS models

Fully Integrated Ultra-Wideband Receiver and Transmitter Front-Ends for Frequency Modulated Continuous Wave Multiple Input Multiple Output Imaging Radars

Implementation and characterization of a W-band SatCom ground terminal receiver with 5 GHz reception bandwidth and mechanical beam steering

Efficient joint broadband radar and communication for airborne SAR imaging with small platforms

Power semiconductor loss characterization and advanced thermal management for high power density AC/DC battery chargers

Entwicklung einer Methodik zur Bestimmung der Schaltverluste von diskreten 400V-GaN-Halbbrücken

A comparison of system architectures for wireless links in the terahertz band

Design of frequency-converting monolithic integrated circuits for millimeter-wave applications

Novel characterization techniques for the study of the dynamic behavior of silicon carbide power MOSFETs

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

PCB-embedded GaN-on-Si half-bridge and driver ICs with on-package gate and DC-link capacitors

Switching characteristics of integrated GaN-on-Si half-bridge and driver circuits

Monolithic integrated AlGaN/GaN power converter topologies on high‐voltage AlN/GaN superlattice buffer

MMICs and Mixed-Signal ICs Based on III/V Technology for Highest Frequencies and Data Rates

A unified approach to charge-conservative capacitance modelling in HEMTs

Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors

Compehensive Nonlinear Modelling of Dispersive Heterstructure Field Effect Transistors and their MMIC Applications

Comprehensive nonlinear modelling of dispersive Heterostructure field effect transistors and their MMIC applications