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Tibor Grasser (1970-)

Elektrotechniker

Name	Tibor Grasser
Time	1970- (Date of birth and death)
Place	Wien (Geburtsort) Österreich
Academic degree	Ao. Univ.-Prof., Dipl.-Ing., Dr. techn.
Profession	Elektrotechniker (characteristic profession) Elektronikingenieur Hochschullehrer
Variant	T. Grasser K.-T. Grasser Klaus-Tibor Grasser Klaus Grasser K. Grasser
Related	Technische Universität Wien
Further information	Univ.-Doz. am Institut für Mikroelektronik der Techn. Univ. Wien; Boogiemusiker
Source	Vorlagen; LCAuth; Internet
Record type	Person
GND-Identifier	136012345
Record ID	136012345
Involved in show all Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs Fluoride dielectrics for 2D transistors Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors FinFETs based on layered 2D semiconductors An ab initio study on resistance switching in hexagonal boron nitride Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning Native high-k oxides for 2D transistors Dielectric Properties of Ultrathin CaF 2 Ionic Crystals Insulators for 2D nanoelectronics: the gap to bridge Insulators for 2D nanoelectronics: the gap to bridge Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs Analysis of the Features of Hot-Carrier Degradation in FinFETs Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices

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Tibor Grasser (1970-)

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs

Fluoride dielectrics for 2D transistors

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

FinFETs based on layered 2D semiconductors

An ab initio study on resistance switching in hexagonal boron nitride

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

Native high-k oxides for 2D transistors

Dielectric Properties of Ultrathin CaF 2 Ionic Crystals

Insulators for 2D nanoelectronics: the gap to bridge

Insulators for 2D nanoelectronics: the gap to bridge

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

Analysis of the Features of Hot-Carrier Degradation in FinFETs

Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation

A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation

Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices

A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices