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Marcel Himmerlich

Ingenieur

Name	Marcel Himmerlich
Place	Ilmenau (Wirkungsort) Genf (Wirkungsort) Deutschland
Gender	männlich
Academic degree	Dr. rer. nat.
Profession	Ingenieur (characteristic profession)
Related	CERN
Further information	Diss. Technische Universität Ilmenau, Fachgebiet Technische Physik I Habilitation Technische Universität Ilmenau, Fachgebiet Experimentalphysik I
Record type	Person
GND-Identifier	137435738
Record ID	137435738
Involved in show all Efficient Combination of Surface Texturing and Functional Coating for Very Low Secondary Electron Yield Surfaces and Rough Nonevaporable Getter Films Energy-resolved secondary-electron emission of candidate beam screen materials for electron cloud mitigation at the Large Hadron Collider Two-dimensional electron gas of the In2O3 surface: enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping Microgravimetric and Spectroscopic Analysis of Solid−Electrolyte Interphase Formation in Presence of Additives Towards Understanding the Cross‐Sensitivity of In 2 O 3 Based Ozone Sensors: Effects of O 3, O 2 and H 2 O Adsorption at In 2 O 3 (111) Surfaces Adsorption and desorption of hydrogen at nonpolar GaN(1¯100) surfaces: kinetics and impact on surface vibrational and electronic properties Electrical conductivity and gas-sensing properties of Mg-doped and undoped single-crystalline In 2 O 3 thin films: bulk vs. surface Changes of the near-surface chemical composition of the 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide room temperature ionic liquid under the influence of irradiation Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs Valence band offsets at oxide/InN interfaces determined by X‐ray photoelectron spectroscopy Morphology controlled open circuit voltage in polymer solar cells Determination of the valence band offsets at HfO 2/InN (0001) and InN/In 0.3 Ga 0.7 N (0001) heterojunctions using X‐ray photoelectron spectroscopy Surface characterization of indium compounds as functional layers for (opto)electronic and sensoric applications Surface characterization of indium compounds as functional layers for (opto)electronic and sensoric applications Electronic properties of organic semiconductor blends: ambipolar mixtures of phthalocyanine and fullerene

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Katalog der Deutschen Nationalbibliothek

Marcel Himmerlich

Efficient Combination of Surface Texturing and Functional Coating for Very Low Secondary Electron Yield Surfaces and Rough Nonevaporable Getter Films

Energy-resolved secondary-electron emission of candidate beam screen materials for electron cloud mitigation at the Large Hadron Collider

Two-dimensional electron gas of the In2O3 surface: enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping

Microgravimetric and Spectroscopic Analysis of Solid−Electrolyte Interphase Formation in Presence of Additives

Towards Understanding the Cross‐Sensitivity of In 2 O 3 Based Ozone Sensors: Effects of O 3, O 2 and H 2 O Adsorption at In 2 O 3 (111) Surfaces

Adsorption and desorption of hydrogen at nonpolar GaN(1¯100) surfaces: kinetics and impact on surface vibrational and electronic properties

Electrical conductivity and gas-sensing properties of Mg-doped and undoped single-crystalline In 2 O 3 thin films: bulk vs. surface

Changes of the near-surface chemical composition of the 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide room temperature ionic liquid under the influence of irradiation

Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures

Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs

Valence band offsets at oxide/InN interfaces determined by X‐ray photoelectron spectroscopy

Morphology controlled open circuit voltage in polymer solar cells

Determination of the valence band offsets at HfO 2/InN (0001) and InN/In 0.3 Ga 0.7 N (0001) heterojunctions using X‐ray photoelectron spectroscopy

Surface characterization of indium compounds as functional layers for (opto)electronic and sensoric applications

Surface characterization of indium compounds as functional layers for (opto)electronic and sensoric applications

Electronic properties of organic semiconductor blends: ambipolar mixtures of phthalocyanine and fullerene