Title |
Herstellung und Charakterisierung von InAlAs/InGaAs/InP Heterostruktur-Feldeffekttransistoren mit niedrigen Gate-Leckströmen / von Christian Heedt |
|---|---|
Involved |
Christian Heedt (Verfasser) |
Published |
1995 |
Extent |
XII, 198 S. : Ill., graph. Darst. |
Thesis |
Duisburg, Univ., Diss., 1995 |
Topic |
|
Subject |
|
Record ID |
945927622 |
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