Title |
Eigenschaften elektrisch aktiver Zustände an der Grenzfläche SiC SiO2 / vorgelegt von Michael Baßler |
|---|---|
Involved |
Michael Baßler (Verfasser) |
Published |
2000 |
Extent |
IV, 170 S. : graph. Darst. |
Thesis |
Erlangen, Nürnberg, Univ., Diss., 2000 |
Topic |
|
Subject |
Siliciumcarbid, Siliciumdioxid, Kondensator, MOS, Elektronenzustand |
Record ID |
960896201 |
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