Title |
Near thermal equilibrium growth of 4H-, 6H-, and 15R-silicon carbide single crystals : sublimation growth of bulk SiC by modified Lely method and the structural, electrical, and optical characterization / Norbert Schulze |
|---|---|
Involved |
Norbert Schulze (Verfasser) |
Published |
Aachen: Shaker |
Extent |
121, XIV S. : Ill., graph. Darst. |
Thesis |
Zugl.: Erlangen, Nürnberg, Univ., Diss., 2001 |
ISBN |
978-3-8265-9210-2 |
Language |
|
Topic |
|
Subject |
Siliciumcarbid, Polytypie, Einkristall, Kristallzüchtung, Hall-Effekt, Raman-Spektroskopie |
Series |
Berichte aus der Halbleitertechnik |
Other editions |
Erscheint auch als Online-Ausgabe: Near-Thermal-Equilibrium Growth of 4H-, 6H-, and 15R-Silicon Carbide Single Crystals : Sublimation growth of bulk SiC by the modified Lely method and the structural, electrical, and optical characterization |
Record ID |
962129291 |
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