Title |
Fabrication and characterization of AIGaN/GaN high electron mobility transistors / vorgelegt von Peter Javorka |
|---|---|
Involved |
Peter Javorka (Verfasser) |
Published |
2004 |
Extent |
122 Bl. : graph. Darst. |
Thesis |
Aachen, Techn. Hochsch., Diss., 2004 (Nicht für den Austausch) |
Language |
|
Topic |
|
Subject |
HEMT, Heterostruktur-Bauelement, Aluminiumnitrid, Galliumnitrid, Substrat (Mikroelektronik), Saphir |
Other editions |
Erscheint auch als Online-Ausgabe: Fabrication and characterization of AlGaN/GaN high electron mobility transistors |
Record ID |
971332762 |
Please note
The beta version does not yet contain all functions and information of the DNB portal catalogue. If you are missing information or want to order a medium, please visit the page in the DNB portal catalogue via the following link: