Title |
Quantum-mechanical modeling of transport parameters for MOS devices / Timm Höhr |
|---|---|
Involved |
Timm Höhr (Verfasser) |
Published |
Konstanz: Hartung-Gorre |
Edition |
1. ed. |
Extent |
XIII, 132 S. : graph. Darst. |
Thesis |
Zugl.: Zürich, Univ., Diss., 2006 |
ISBN |
978-3-86628-087-8 |
Language |
|
Country |
|
Topic |
|
Subject |
Halbleiterbauelement, MOS, Elektronischer Transport, Quanteneffekt, Drift-Diffusions-Modell, Simulation |
DDC notation |
|
Series |
Series in microelectronics ; Vol. 173 |
Record ID |
981350305 |
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